Journal ArticleDOI
Vapor‐liquid‐solid mechanism of single crystal growth
R. S. Wagner,W. C. Ellis +1 more
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.read more
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Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine
TL;DR: Au-catalyzed self-assembly of GaAs nanowires on (1¯1¯ 1¯)B GaAs by metalorganic vapor phase epitaxy is reported between 375 and 500°C, using tertiary butylarsine and trimethylgallium in H2 as discussed by the authors.
Journal ArticleDOI
Synthetic Nanoelectronic Probes for Biological Cells and Tissues
Bozhi Tian,Charles M. Lieber +1 more
TL;DR: This review focuses on the interfaces between nanoelectronics and biology, and describes the development of nanoFETs that are comparable in size to biological nanostructures involved in communication through synthesized nanowires.
Journal ArticleDOI
Thermal and chemical vapor deposition of Si nanowires: Shape control, dispersion, and electrical properties
Alan Colli,A. Fasoli,Paul Beecher,Peyman Servati,Simone Pisana,Yong Qing Fu,Andrew J. Flewitt,William I. Milne,John Robertson,Caterina Ducati,S. De Franceschi,Stephan Hofmann,Andrea C. Ferrari +12 more
TL;DR: In this paper, the authors investigate and compare complementary approaches to SiNW production in terms of yield, morphology control, and electrical properties, and report concentrated and stable dispersions of SiNWs in solvents compatible with semiconducting organic polymers.
Journal ArticleDOI
Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy: Tapering, sidewall faceting and crystal structure
M.C. Plante,Ray R. LaPierre +1 more
TL;DR: In this article, GaAs nanowires grown by gas source molecular beam epitaxy for 3, 10, 30, and 40 min durations were studied by both scanning and transmission electron microscopy, providing a description of the time evolution of the nanowire morphology and structure.
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State of the Art and Future Perspectives in Advanced CMOS Technology.
Henry H. Radamson,Huilong Zhu,Zhenhua Wu,Xiaobin He,Hongxiao Lin,Jinbiao Liu,Jinjuan Xiang,Zhenzhen Kong,Wenjuan Xiong,Junjie Li,Hushan Cui,Jianfeng Gao,Hong Yang,Yong Du,Buqing Xu,Ben Li,Xuewei Zhao,Xuewei Zhao,Jiahan Yu,Yan Dong,Guilei Wang +20 more
TL;DR: New architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology are presented and new metrology techniques that may appear in the near future are discussed.
References
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Journal ArticleDOI
The influence of dislocations on crystal growth
TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4
TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
Journal ArticleDOI
Growth and Defect Structure of Sapphire Microcrystals
W. W. Webb,W. D. Forgeng +1 more
TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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Morphology and Growth Mechanism of Silicon Ribbons
R. S. Wagner,R. G. Treuting +1 more