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Journal ArticleDOI

Vapor‐liquid‐solid mechanism of single crystal growth

R. S. Wagner, +1 more
- 01 Mar 1964 - 
- Vol. 4, Iss: 5, pp 89-90
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.

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Citations
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Pressure-induced orientation control of the growth of epitaxial silicon nanowires.

TL;DR: Structural characterization of a large number of samples shows that SiNWs synthesized at a total pressure of 3 mbar grow preferentially in the 111 direction, while the one at 15 mbar favors the 112 direction.
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Multiangular Branched ZnS Nanostructures with Needle-Shaped Tips: Potential Luminescent and Field-Emitter Nanomaterial

TL;DR: A facile and effective route toward the synthesis of ZnS multi-angular branched nanostructures with needle-shaped tips has been developed in this article, where an average width of the structurally and chemically uniform, single-crystalline, defect-free tips was found to be less than 10 nm.
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Advances in nanowire bioelectronics.

TL;DR: Recent results in nanowire bioelectronics for biomedical applications ranging from label-free sensing of biomolecules, to extracellular and intracellular electrophysiological recording are introduced.
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Nanofibrous Calcite Synthesized via a Solution−Precursor−Solid Mechanism

TL;DR: In this paper, a solution-precursor−solid (SPS) mechanism was proposed as the growth mechanism for calcite fibers, which has features similar to both the VLS and SLS mechanisms.
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An outline of the synthesis and properties of silicon nanowires

TL;DR: In this article, the authors consider some of the significant aspects of Silicon nanowires (NWs), referring to their various modes of fabrication and their measured properties, e.g., Lithographic patterning as well as individual NW synthesis.
References
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Journal ArticleDOI

The influence of dislocations on crystal growth

TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4

TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
Journal ArticleDOI

Growth and Defect Structure of Sapphire Microcrystals

TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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