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Vapor‐liquid‐solid mechanism of single crystal growth
R. S. Wagner,W. C. Ellis +1 more
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.read more
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Self-assembled growth and optical emission of silver-capped silicon nanowires
TL;DR: In this paper, a self-assembled localized microscopic electrochemical cell model was used to explain the formation mechanism of silver-capped silicon nanowires with a strong ultraviolet-emitting property.
Journal ArticleDOI
A general route to nanocrystal kebabs periodically assembled on stretched flexible polymer shish
TL;DR: Simulations based on self-consistent field theory reveal that the formation of organic-inorganic shish-kebabs is guided by the self-assembled elongated star-like diblock copolymer constituents constrained on the highly stretched polymer chain.
Journal ArticleDOI
Microstructural evolution of oxides and semiconductor thin films
Zhiwen Chen,Zhiwen Chen,Zheng Jiao,Minghong Wu,Chan-Hung Shek,Chi-Man Lawrence Wu,Joseph K. L. Lai +6 more
TL;DR: In this article, the preparation methodologies and the microstructural characteristics of semiconductor thin films, including SnO 2 thin films and metal oxides, are introduced and compared.
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Wafer-Scale High-Throughput Ordered Arrays of Si and Coaxial Si/Si1–xGex Wires: Fabrication, Characterization, and Photovoltaic Application
Caofeng Pan,Caofeng Pan,Zhixiang Luo,Chen Xu,Jun Luo,Renrong Liang,Guang Zhu,Wenzhuo Wu,Wenxi Guo,Xingxu Yan,Jun Xu,Zhong Lin Wang,Jing Zhu +12 more
TL;DR: Inspired by the excellent antireflection properties of the Si/SiGe wire arrays, solar cells were built based on the arrays of these wires containing radial junctions, an example of which exhibits an open circuit voltage of 650 mV, a short-circuit current density of 8.38 mA/cm(2), and an energy conversion efficiency of 3.26%.
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Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion
TL;DR: In this paper, it was shown that catalyst-free growth of well-separated GaN nanowires by plasma-assisted molecular beam epitaxy can be achieved at moderate temperature using an additional indium flux.
References
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The influence of dislocations on crystal growth
TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4
TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
Journal ArticleDOI
Growth and Defect Structure of Sapphire Microcrystals
W. W. Webb,W. D. Forgeng +1 more
TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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Morphology and Growth Mechanism of Silicon Ribbons
R. S. Wagner,R. G. Treuting +1 more