Journal ArticleDOI
Vapor‐liquid‐solid mechanism of single crystal growth
R. S. Wagner,W. C. Ellis +1 more
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.read more
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Structure- and size-controlled ultrafine ZnS nanowires
TL;DR: The first synthesis of ultrafine zinc sulfide (ZnS) nanowires with a sphalerite structure was reported in this paper, where large-area, high-and uniform-density ZnS nanowsires were grown on Au-coated silicon substrates by hydrogen-assisted thermal evaporation.
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In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano CoSi2 in nanowires of Si.
Yi-Chia Chou,Wen-Wei Wu,Shao Liang Cheng,Bongyoung Yoo,Nosang V. Myung,Lih J. Chen,King-Ning Tu +6 more
TL;DR: The axial heterostructure of CoSi2/Si/CoSi2 with sharp epitaxial interfaces has been obtained and the heterostructures are promising as high performance transistors based on intrinsic Si nanowires.
Journal ArticleDOI
Shape regulation of high-index facet nanoparticles by dealloying.
Liliang Huang,Mohan Liu,Haixin Lin,Yaobin Xu,Jinsong Wu,Vinayak P. Dravid,Chris Wolverton,Chad A. Mirkin +7 more
TL;DR: A study of the PtSb system showed that the tetrahexahedron shape resulted from the evaporative removal of Sb from the initial alloy—a shape-regulating process fundamentally different from solution-phase, ligand-dependent processes.
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Photoluminescence and Raman Scattering from Catalytically Grown ZnxCd1-xSe Alloy Nanowires
TL;DR: Strong PL from the Zn(x)Cd(1-x)Se nanowires can be tuned from red (712 nm) to blue (463 nm) with x varying from 0 to 1 and has demonstrated that the alloy Nanowires have potential applications in optical and sensory nanotechnology.
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Directed assembly of ZnO nanowires on a Si substrate without a metal catalyst using a patterned ZnO seed layer
TL;DR: In this article, a single-crystalline structure with c-axis preferred orientation and a strong intrinsic near band edge photoluminescence peak at 380 nm was demonstrated for vertically aligned ZnO nanowires on a (100) Si substrate.
References
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Journal ArticleDOI
The influence of dislocations on crystal growth
TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4
TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
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Growth and Defect Structure of Sapphire Microcrystals
W. W. Webb,W. D. Forgeng +1 more
TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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Morphology and Growth Mechanism of Silicon Ribbons
R. S. Wagner,R. G. Treuting +1 more