Journal ArticleDOI
Vapor‐liquid‐solid mechanism of single crystal growth
R. S. Wagner,W. C. Ellis +1 more
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.read more
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Growth, thermodynamics, and electrical properties of silicon nanowires.
TL;DR: A comparison study of the reaction of gold-like and Au-like catalysts in the presence of low Si Solubility solvent and that of a solvent with high solubility, finds that the latter results in higher purity than the former.
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Dislocation-Driven Nanowire Growth and Eshelby Twist
TL;DR: Hierarchical nanostructures of lead sulfide nanowires resembling pine trees synthesized by chemical vapor deposition revealed a screwlike dislocation in the nanowire trunks with helically rotating epitaxial branch Nanowires, confirming the Eshelby theory of dislocations.
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GaN based nanorods for solid state lighting
Shunfeng Li,Andreas Waag +1 more
TL;DR: In this paper, a review of the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN Nanorods is presented. But, the authors also discuss problems and open questions, which may impose obstacles during the future development of a GaN-based LED technology.
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Diameter-dependent growth direction of epitaxial silicon nanowires.
TL;DR: It is suggested that the interplay of the liquid-solid interfacial energy with the silicon surface energy expressed in terms of an edge tension is responsible for the change of the growth direction.
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Solution-grown silicon nanowires for lithium-ion battery anodes
TL;DR: Composite electrodes composed of silicon nanowires synthesized using the supercritical fluid-liquid-solid (SFLS) method mixed with amorphous carbon or carbon nanotubes were evaluated as Li-ion battery anodes.
References
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The influence of dislocations on crystal growth
TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4
TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
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Growth and Defect Structure of Sapphire Microcrystals
W. W. Webb,W. D. Forgeng +1 more
TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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Morphology and Growth Mechanism of Silicon Ribbons
R. S. Wagner,R. G. Treuting +1 more