Journal ArticleDOI
Vapor‐liquid‐solid mechanism of single crystal growth
R. S. Wagner,W. C. Ellis +1 more
Reads0
Chats0
About:
This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.read more
Citations
More filters
Journal ArticleDOI
Current understanding of the growth of carbon nanotubes in catalytic chemical vapour deposition
TL;DR: In the field of nanotube synthesis, catalytic chemical vapour deposition (CVD) is the prevailing synthesis method of carbon nanotubes as discussed by the authors, due to its higher degree of control and its scalability.
Journal ArticleDOI
Silicon nanowire devices
TL;DR: In this article, transport measurements were carried out on 15-35 nm diameter silicon nanowires grown using SiH4 chemical vapor deposition via Au or Zn particle-nucleated vapor-liquid-solid growth at 440°C.
Journal ArticleDOI
Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin films
C. Hayzelden,J. L. Batstone +1 more
TL;DR: In this paper, the nucleation and growth of isolated nickel disilicide precipitates in amorphous Si thin films and the subsequent low-temperature silicide-mediated crystallization of Si was studied using in situ transmission electron microscopy.
Journal ArticleDOI
Growth of aligned ZnO nanorod arrays by catalyst-free pulsed laser deposition methods
TL;DR: In this paper, a set of well-aligned ZnO nanorods were synthesized on a Si substrate at 600 °C by 193 nm pulsed laser ablation of a target in low pressures of oxygen using electron microscopy and X-ray diffraction.
Journal ArticleDOI
Realization of a silicon nanowire vertical surround-gate field-effect transistor.
TL;DR: A generic process for fabricating a vertical surround-gate field-effect transistor (VS-FET) based on epitaxially grown nanowires is described, and a first electrical characterization proving the feasibility of the process developed and the basic functionality of this device is presented.
References
More filters
Journal ArticleDOI
The influence of dislocations on crystal growth
TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
Journal ArticleDOI
Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4
TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
Journal ArticleDOI
Growth and Defect Structure of Sapphire Microcrystals
W. W. Webb,W. D. Forgeng +1 more
TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
Journal ArticleDOI
Morphology and Growth Mechanism of Silicon Ribbons
R. S. Wagner,R. G. Treuting +1 more