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Journal ArticleDOI

Vapor‐liquid‐solid mechanism of single crystal growth

R. S. Wagner, +1 more
- 01 Mar 1964 - 
- Vol. 4, Iss: 5, pp 89-90
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.

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Citations
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Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth

TL;DR: In this paper, the structure and composition of the metallic particles were analyzed by transmission electron microscopy and energy dispersive x-ray spectroscopy, and three different metallic compounds were identified: the hexagonal β′Au7Ga2 structure, the orthorhombic AuGa structure, and an almost pure Au face centered cubic structure.
Journal ArticleDOI

Properties, synthesis, and growth mechanisms of carbon nanotubes with special focus on thermal chemical vapor deposition

TL;DR: Important considerations for in situ characterization and new reactor designs that may enable researchers to better understand the physical growth mechanisms and to optimize the synthesis of CNTs are illustrated, thus contributing to make carbon nanotubes a manufacturing reality.
Journal ArticleDOI

Temperature‐Controlled Catalytic Growth of ZnS Nanostructures by the Evaporation of ZnS Nanopowders

TL;DR: Based on the appearance of the as-synthesized products, this paper showed that substrate temperature and catalyst are the critical factors for controlling the size and the structure of various kinds of ZnS nanostructures, such as nanorods, nanowires, nanobelts and nanosheets.
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Screw dislocation driven growth of nanomaterials.

TL;DR: It is shown that the dislocation-driven growth mechanism, where screw dislocation defects provide self-perpetuating growth steps to enable the anisotropic growth of various nanomaterials at low supersaturation, can be a powerful and versatile synthetic method for a wide variety of nanommaterials.
References
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Journal ArticleDOI

The influence of dislocations on crystal growth

TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4

TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
Journal ArticleDOI

Growth and Defect Structure of Sapphire Microcrystals

TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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