Journal ArticleDOI
Vapor‐liquid‐solid mechanism of single crystal growth
R. S. Wagner,W. C. Ellis +1 more
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.read more
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Fabricating nanowire devices on diverse substrates by simple transfer-printing methods
TL;DR: Three new transfer-printing methods for fabricating nanowire devices on diverse substrates including polydimethylsiloxane, Petri dishes, Kapton tapes, thermal release tapes, and many types of adhesive tapes are reported.
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Axial InP nanowire tandem junction grown on a silicon substrate.
Magnus Heurlin,Peter Wickert,Stefan Fält,Magnus T. Borgström,Knut Deppert,Lars Samuelson,Martin Magnusson +6 more
TL;DR: Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pN-Junction device.
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Semiconductor nanowires from oxides
TL;DR: In this paper, a new growth mechanism was proposed on the basis of microstructure and different morphologies of the nanowires observed, which is based on the decomposition of semiconductor suboxides and defect structures.
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Formation of multiscale surface structures on nickel via above surface growth and below surface growth mechanisms using femtosecond laser pulses.
TL;DR: This is the first demonstration to the authors' knowledge of the use of femtosecond laser pulses to fabricate metallic surface structures that rise above the original surface and these results are useful in understanding the details of multi-pulse femtosescond laser interaction with metals.
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Silicon Nanowire Field-Effect Transistors—A Versatile Class of Potentiometric Nanobiosensors
TL;DR: CMOS compatible Si-NW FET nanobiosensors are summarized and recent developments in device fabrication, fluid integration, surface functionalization, and biosensing applications are summarized.
References
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The influence of dislocations on crystal growth
TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4
TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
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Growth and Defect Structure of Sapphire Microcrystals
W. W. Webb,W. D. Forgeng +1 more
TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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Morphology and Growth Mechanism of Silicon Ribbons
R. S. Wagner,R. G. Treuting +1 more