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Journal ArticleDOI

Vapor‐liquid‐solid mechanism of single crystal growth

R. S. Wagner, +1 more
- 01 Mar 1964 - 
- Vol. 4, Iss: 5, pp 89-90
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.

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Citations
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Correlating Nanorod Structure with Experimentally Measured and Theoretically Predicted Surface Plasmon Resonance

TL;DR: The extinction spectra of Au nanorods electrochemically synthesized using anodic aluminum oxide templates are reported and the dependence of the dipole plasmon wavelength on both rod length and diameter is determined, and an equation for predicting longitudinal dipole resonance wavelength for nanorod dimensions beyond the quasistatic limit is derived.
Journal ArticleDOI

Solvothermal/hydrothermal route to semiconductor nanowires

TL;DR: In this article, the authors present an integrated discussion of nanowire growth, mainly from four aspects in the solvothermal/hydrothermal process, including materials with highly anisotropic crystal structures, coordination directing/mixed solvents, surfactants/capping reagents, and reaction at relatively high temperature.
Journal ArticleDOI

Catalyst-free growth of single-crystal silicon and germanium nanowires.

TL;DR: Metal-free synthesis of high-density single-crystal elementary semiconductor nanowires with tunable electrical conductivities and systematic diameter control with narrow size distributions is reported, offering a method to eliminate potential metal catalyst contamination.
Journal ArticleDOI

Synergism of C5N six-membered ring and vapor-liquid-solid growth of CNx nanotubes with pyridine precursor

TL;DR: A synergism mechanism of C(5)N-six-membered-ring-based growth through surface diffusion and vapor-liquid-solid growth through bulk diffusion was accordingly deduced and schematically presented and could help understand the CN(x)()-nanotube-related experimental phenomena in the literature.
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Self-organized growth of GaAs/InAs heterostructure nanocylinders by organometallic vapor phase epitaxy

TL;DR: In this article, free-standing GaAs InAs heterostructure wires as thin as 20 nm and as long as 1 μm have been formed by vapor-liquid-solid (VLS) growth during organometallic vapor phase epitaxy.
References
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Journal ArticleDOI

The influence of dislocations on crystal growth

TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
Journal ArticleDOI

Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4

TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
Journal ArticleDOI

Growth and Defect Structure of Sapphire Microcrystals

TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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