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Vapor‐liquid‐solid mechanism of single crystal growth

R. S. Wagner, +1 more
- 01 Mar 1964 - 
- Vol. 4, Iss: 5, pp 89-90
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.

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Role of nonlinear effects in nanowire growth and crystal phase

TL;DR: Theoretically and experimentally nonlinear effects during the ''vapor-liquid-solid'' growth of semiconductor nanowires have been studied in this paper, where four possible growth scenarios: (I) infinite growth; (II) decomposition; (III) averaging growth to a finite length; and (IV) continuing growth such that nanewires of small initial length decay and longer ones grow infinitely.
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Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires

TL;DR: In this paper, the occurrence of cubic silicon/hexagonal silicon as disks defined along the nanowire growth direction is reviewed in detail for Si nanowires obtained using Cu as catalyst.
Journal ArticleDOI

Metalorganic vapor-phase epitaxial growth and characterization of vertical InP nanowires

TL;DR: In this paper, high-density and free-standing InP nanowire structures of vertical orientation were grown by the metalorganic vapor-phase epitaxial technique using colloidal Au nanoparticles as the catalyst.
Journal ArticleDOI

Oxide-Assisted Catalytic Growth of MgO Nanowires with Uniform Diameter Distribution

TL;DR: MgO nanowires with uniform diameter distribution of about 20 nm have been synthesized by boron oxide-assisted catalytic growth method as mentioned in this paper, where X-ray diffraction, scanning electron microscopy, and high-reso...
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Control of GaAs nanowire morphology and crystal structure

TL;DR: Comparison of nanowire densities on the various post-growth surfaces suggests a possible incubation time between the moment the Ga shutter is opened and when nanowires growth is initiated, making the process suitable for the fabrication of core-shell structures.
References
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Journal ArticleDOI

The influence of dislocations on crystal growth

TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4

TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
Journal ArticleDOI

Growth and Defect Structure of Sapphire Microcrystals

TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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