Journal ArticleDOI
Vapor‐liquid‐solid mechanism of single crystal growth
R. S. Wagner,W. C. Ellis +1 more
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.read more
Citations
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Controlling nanowire structures through real time growth studies
TL;DR: In situ electron microscopy can be used to visualize the physical processes that control the growth of Si and Ge nanowires through the vapor-liquid-solid mechanism as mentioned in this paper, which provides a unique window into the fundamentals of crystal growth as well as an opportunity to fabricate precisely controlled structures for novel applications.
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Formation and Structure of Silicon Carbide Whiskers from Rice Hulls
TL;DR: A study of the distribution of Si in rice hulls was carried out to aid in understanding the observed formation of SIC whiskers by the thermal decomposition and reaction of these natural materials.
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Crystal Phases in III--V Nanowires: From Random Toward Engineered Polytypism
TL;DR: In this article, the authors review progress towards the realization of perfect wurtzite and zinc-blende phases in III-V nanowires, eventually leading to true phase engineering in single NWs.
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Synthesis and optical properties of flower-like ZnO nanorods by thermal evaporation method
TL;DR: In this article, a mixture of ZnO/graphite powders using the thermal evaporation and vapor transport on Si (1.0.0) substrates without any catalyst was synthesized.
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Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy
TL;DR: In this paper, GaAs∕AlGaAs core-shell nanowires were fabricated by using selective area metalorganic vapor phase epitaxy (SVAE) by selectively growing on partially masked GaAs (111)B substrates.
References
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Journal ArticleDOI
The influence of dislocations on crystal growth
TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4
TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
Journal ArticleDOI
Growth and Defect Structure of Sapphire Microcrystals
W. W. Webb,W. D. Forgeng +1 more
TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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Morphology and Growth Mechanism of Silicon Ribbons
R. S. Wagner,R. G. Treuting +1 more