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Journal ArticleDOI

Vapor‐liquid‐solid mechanism of single crystal growth

R. S. Wagner, +1 more
- 01 Mar 1964 - 
- Vol. 4, Iss: 5, pp 89-90
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.

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Citations
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Thermal conductivity of Si/SiGe superlattice nanowires

TL;DR: The thermal conductivities of individual single crystalline Si/SiGe superlattice nanowires with diameters of 58 and 83 nm were measured over a temperature range from 20 to 320 K.
Journal ArticleDOI

Oriented nanostructures for energy conversion and storage.

TL;DR: This Review highlights the role of high surface area to maximize the surface activity and discusses the importance of optimum dimension and architecture, controlled pore channels, and alignment of the nanocrystalline phase to optimize the transport of electrons and ions.
Journal ArticleDOI

Synthesis of carbon nanotubes by catalytic chemical vapour deposition: A review on carbon sources, catalysts and substrates

TL;DR: In this paper, the role of carbon sources, catalysts and substrates with regard to CCVD synthesis of carbon nanotubes is reviewed in light of latest developments and understandings in the field.
Journal ArticleDOI

Novel fabrication of an SnO2 nanowire gas sensor with high sensitivity

TL;DR: A nanowire-based gas sensor is fabricated using a simple method of growing SnO(2) nanowires bridging the gap between two pre-patterned Au catalysts, in which the electrical contacts to the Nanowires are self-assembled during the synthesis of the nanOWires.
Journal ArticleDOI

Synthetic Control of the Diameter and Length of Single Crystal Semiconductor Nanowires

TL;DR: In this paper, a general synthetic method has been developed to control both the diameter and the length of nanowires during growth by exploiting monodisperse nanocluster catalysts.
References
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Journal ArticleDOI

The influence of dislocations on crystal growth

TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
Journal ArticleDOI

Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4

TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
Journal ArticleDOI

Growth and Defect Structure of Sapphire Microcrystals

TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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