Showing papers on "Amorphous silicon published in 2018"

Stable organic thin-film transistors

Abstract: Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al 2 O 3 :HfO 2 nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 10 5 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm 2 V −1 s −1 . Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies.

Nonlinear optics on silicon-rich nitride—a high nonlinear figure of merit CMOS platform [Invited]

Abstract: CMOS platforms with a high nonlinear figure of merit are highly sought after for high photonic quantum efficiencies, enabling functionalities not possible from purely linear effects and ease of integration with CMOS electronics. Silicon-based platforms have been prolific amongst the suite of advanced nonlinear optical signal processes demonstrated to date. These include crystalline silicon, amorphous silicon, Hydex glass, and stoichiometric silicon nitride. Residing between stoichiometric silicon nitride and amorphous silicon in composition, silicon-rich nitride films of various formulations have emerged recently as promising nonlinear platforms for high nonlinear figure of merit nonlinear optics. Silicon-rich nitride films are compositionally engineered to create bandgaps that are sufficiently large to eliminate two-photon absorption at telecommunications wavelengths while enabling much larger nonlinear waveguide parameters (5x–500x) than those in stoichiometric silicon nitride. This paper reviews recent developments in the field of nonlinear optics using silicon-rich nitride platforms, as well as the outlook and future opportunities in this burgeoning field.

Porous amorphous silicon film anodes for high-capacity and stable all-solid-state lithium batteries

Abstract: Owing to its high theoretical capacity of ~4200 mAh g−1 and low electrode potential ( 99.8% efficiency over 100 cycles) using porous silicon films with inorganic solid electrolyte.

Metaheuristic Algorithm for Photovoltaic Parameters: Comparative Study and Prediction with a Firefly Algorithm

Abstract: In this paper, a Firefly algorithm is proposed for identification and comparative study of five, seven and eight parameters of a single and double diode solar cell and photovoltaic module under different solar irradiation and temperature. Further, a metaheuristic algorithm is proposed in order to predict the electrical parameters of three different solar cell technologies. The first is a commercial RTC mono-crystalline silicon solar cell with single and double diodes at 33 °C and 1000 W/m2. The second, is a flexible hydrogenated amorphous silicon a-Si:H solar cell single diode. The third is a commercial photovoltaic module (Photowatt-PWP 201) in which 36 polycrystalline silicon cells are connected in series, single diode, at 25 °C and 1000 W/m2 from experimental current-voltage. The proposed constrained objective function is adapted to minimize the absolute errors between experimental and predicted values of voltage and current in two zones. Finally, for performance validation, the parameters obtained through the Firefly algorithm are compared with recent research papers reporting metaheuristic optimization algorithms and analytical methods. The presented results confirm the validity and reliability of the Firefly algorithm in extracting the optimal parameters of the photovoltaic solar cell.

The conversion mechanism of amorphous silicon to stoichiometric WS2

Abstract: The deposition of ultra-thin tungsten films and their related 2D chalcogen compounds on large area dielectric substrates by gas phase reactions is challenging. The lack of nucleation sites complicates the adsorption of W-related precursors and subsequent sulfurization usually requires high temperatures. We propose here a technique in which a thin solid amorphous silicon film is used as reductant for the gas phase precursor WF6 leading to the conversion to metallic W. The selectivity of the W conversion towards the underlying dielectric surfaces is demonstrated. The role of the Si surface preparation, the conversion temperature, and Si thickness on the formation process is investigated. Further, the in situ conversion of the metallic tungsten into thin stoichiometric WS2 is achieved by a cyclic approach based on WF6 and H2S pulses at the moderate temperature of 450 °C, which is much lower than usual oxide sulfurization processes.

How we made the IGZO transistor

Abstract: Thin-film transistors made from indium gallium zinc oxide (IGZO) are driving the next evolution in active-matrix flat panel displays. Hideo Hosono recounts how demand for a high-performance alternative to amorphous silicon transistors led to their development.

Hole-Collection Mechanism in Passivating Metal-Oxide Contacts on Si Solar Cells: Insights From Numerical Simulations

Abstract: Silicon heterojunction solar cells enable high conversion efficiencies, thanks to their passivating contacts which consist of layered stacks of intrinsic and doped amorphous silicon. However, such contacts may reduce the photo current, when present on the illuminated side of the cell. This motivates the search for wider bandgap contacting materials, such as metal oxides. In this paper, we elucidate the precise impact of the material parameters of MoO x on device characteristics, based on numerical simulations. The simulation results allow us to propose design principles for hole-collecting induced junctions. We find that if MoOx has a sufficiently high electron affinity ( $\geq \text{{5.7 eV}}$ ), direct band-to-band tunneling is the dominant transport mechanism; whereas if it has a lower electron affinity ( $ ), trap-assisted tunneling dominates, which might introduce additional series resistance. At even lower electron affinity, S-shaped J–V curves may appear for these solar cells, which are found to be due to an insufficient trap state density in the MoOx film in contrast to the expectation of better performance at low trap density. These traps may assist carrier transport when present near the conduction band edge of the MoOx film. Our simulations predict that performance optimization for the MoOx film has to target either 1) a high electron affinity and a moderate doping density film or, 2) if the electron affinity is lower than the optimum value, a high defect density not exceeding the doping density inside the film.

An amorphous Si material with a sponge-like structure as an anode for Li-ion and Na-ion batteries.

Abstract: Sponge-like amorphous silicon was prepared by reacting silicon tetrachloride with magnesium powder When the as-prepared sample was applied as an anode in rechargeable batteries, it exhibited a reversible capacity of 1125 mA h g−1 after 100 cycles at 1 A g−1 for Li-ion batteries (LIBs) and a reversible capacity of 176 mA h g−1 at 100 mA g−1 over 100 cycles for Na-ion batteries (NIBs)

Fluoroethylene Carbonate as a Directing Agent in Amorphous Silicon Anodes: Electrolyte Interface Structure Probed by Sum Frequency Vibrational Spectroscopy and Ab Initio Molecular Dynamics

Abstract: Fluorinated compounds are added to carbonate-based electrolyte solutions in an effort to create a stable solid electrolyte interphase (SEI). The SEI mitigates detrimental electrolyte redox reactions taking place on the anode’s surface upon applying a potential in order to charge (discharge) the lithium (Li) ion battery. The need for a stable SEI is dire when the anode material is silicon as silicon cracks due to its expansion and contraction upon lithiation and delithiation (charge–discharge) cycles, consequently limiting the cyclability of a silicon-based battery. Here we show the molecular structures for ethylene carbonate (EC): fluoroethylene carbonate (FEC) solutions on silicon surfaces by sum frequency generation (SFG) vibrational spectroscopy, which yields vibrational spectra of molecules at interfaces and by ab initio molecular dynamics (AIMD) simulations at open circuit potential. Our AIMD simulations and SFG spectra indicate that both EC and FEC adsorb to the amorphous silicon (a-Si) through thei...

High-efficiency hybrid amorphous silicon grating couplers for sub-micron-sized lithium niobate waveguides

Abstract: We demonstrate hybrid amorphous silicon uniform grating couplers for efficient coupling between the standard single-mode fiber and sub-micron lithium niobate waveguides. The grating couplers exhibit coupling efficiency of −3.06 dB and 1-dB bandwidth of 55 nm. The amorphous silicon grating couplers can also provide a universal building block applicable to other photonic platforms such as silicon nitride waveguides, whose moderate refractive index values prevent high efficiency grating couplers to be fabricated in the native waveguide.

Silicon-Based Optical Mirror Coatings for Ultrahigh Precision Metrology and Sensing.

Abstract: Thermal noise of highly reflective mirror coatings is a major limit to the sensitivity of many precision laser experiments with strict requirements such as low optical absorption. Here, we investigate amorphous silicon and silicon nitride as an alternative to the currently used combination of coating materials, silica, and tantala. We demonstrate an improvement by a factor of $\ensuremath{\approx}55$ with respect to the lowest so far reported optical absorption of amorphous silicon at near-infrared wavelengths. This reduction was achieved via a combination of heat treatment, final operation at low temperature, and a wavelength of $2\text{ }\text{ }\ensuremath{\mu}\mathrm{m}$ instead of the more commonly used 1550 nm. Our silicon-based coating offers a factor of 12 thermal noise reduction compared to the performance possible with silica and tantala at 20 K. In gravitational-wave detectors, a noise reduction by a factor of 12 corresponds to an increase in the average detection rate by three orders of magnitude ($\ensuremath{\approx}{12}^{3}$).

Two orders of magnitude reduction in silicon membrane thermal conductivity by resonance hybridizations

Abstract: The thermal conductivity of a freestanding single-crystal silicon membrane may be reduced significantly by attaching nanoscale pillars on one or both surfaces. Atomic resonances of the nanopillars form vibrons that intrinsically couple with the base membrane phonons causing mode hybridization and flattening at each coupling location in the phonon band structure. This in turn causes group velocity reductions of existing phonons, in addition to introducing new modes that get excited but are localized and do not transport energy. The nanopillars also reduce the phonon lifetimes at and around the hybridization zones. These three effects, which in principle may be tuned to take place across silicon's full spectrum, lead to a lowering of the in-plane thermal conductivity in the base membrane. Using equilibrium molecular dynamics simulations, and utilizing the concept of vibrons compensation, we report a staggering two orders of magnitude reduction in the thermal conductivity at room temperature by this mechanism. Specifically, a reduction of a factor of 130 is demonstrated for a roughly 10-nm-thick pillared membrane compared to a corresponding unpillared membrane. This amounts to a record reduction of a factor of 481 compared to bulk crystalline silicon and nearly a factor of 2 compared to bulk amorphous silicon. These results are obtained while providing a path for preserving performance with upscaling.

Requirements for efficient hole extraction in transition metal oxide-based silicon heterojunction solar cells

Abstract: Transition metal oxides (TMOs) are of increasing importance for many applications reaching from thin-film transistors and non-volatile memory to novel contact layers in photovoltaics. Due to their tunable electrical properties and high transparency, TMOs are also promising candidates as contact layers in silicon heterojunction solar cells already leading to cell efficiencies of about 22%. However, the current extraction of charge carriers via these thin contact layers is still not fully understood. To assist the engineering of novel silicon heterojunctions, numerical device simulations are used to improve knowledge regarding relevant heterojunction and thin film properties. The efficient current extraction from a silicon absorber is investigated with Sentaurus TCAD for a TMO-based hole contact. It is shown that for an ideal hole extraction from the induced crystalline silicon pn-junction via the amorphous silicon buffer and the TMO into the external metal electrode, two requirements have to be fulfilled: (A) A sufficiently high TMO work function is needed to ensure a high hole conductivity (via a high charge carrier ratio p/n) in the induced pn-junction within the silicon absorber. (B) Extraction of those holes into the TMO calls for efficient trap-assisted tunneling. Experimental evidence for a limitation of hole extraction by (A) and (B) is given for a variety of TMO based hole contacts using molybdenum oxide.

Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors.

Abstract: Source-semiconductor-drain coplanar transistors with an organic semiconductor layer located within the same plane of source/drain electrodes are attractive for next-generation electronics, because they could be used to reduce material consumption, minimize parasitic leakage current, avoid cross-talk among different devices, and simplify the fabrication process of circuits. Here, a one-step, drop-casting-like printing method to realize a coplanar transistor using a model semiconductor/insulator [poly(3-hexylthiophene) (P3HT)/polystyrene (PS)] blend is developed. By manipulating the solution dewetting dynamics on the metal electrode and SiO2 dielectric, the solution within the channel region is selectively confined, and thus make the top surface of source/drain electrodes completely free of polymers. Subsequently, during solvent evaporation, vertical phase separation between P3HT and PS leads to a semiconductor-insulator bilayer structure, contributing to an improved transistor performance. Moreover, this coplanar transistor with semiconductor-insulator bilayer structure is an ideal system for injecting charges into the insulator via gate-stress, and the thus-formed PS electret layer acts as a "nonuniform floating gate" to tune the threshold voltage and effective mobility of the transistors. Effective field-effect mobility higher than 1 cm2 V-1 s-1 with an on/off ratio > 107 is realized, and the performances are comparable to those of commercial amorphous silicon transistors. This coplanar transistor simplifies the fabrication process of corresponding circuits.

Amorphous Silicon with Extremely Low Absorption: Beating Thermal Noise in Gravitational Astronomy.

Abstract: Amorphous silicon has ideal properties for many applications in fundamental research and industry. However, the optical absorption is often unacceptably high, particularly for gravitational-wave detection. We report a novel ion-beam deposition method for fabricating amorphous silicon with unprecedentedly low unpaired electron-spin density and optical absorption, the spin limit on absorption being surpassed for the first time. At low unpaired electron density, the absorption is no longer correlated with electron spins, but with the electronic mobility gap. Compared to standard ion-beam deposition, the absorption at 1550 nm is lower by a factor of ≈100. This breakthrough shows that amorphous silicon could be exploited as an extreme performance optical coating in near-infrared applications, and it represents an important proof of concept for future gravitational-wave detectors.

High-Performance All-Printed Amorphous Oxide FETs and Logics with Electronically Compatible Electrode/Channel Interface.

Abstract: Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium–gallium–zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes, and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be ...

Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions

Abstract: Amorphous indium–gallium–zinc oxide (a-InGaZnO or a-IGZO) has already started replacing amorphous silicon in backplane driver transistors for large-area displays However, hardly any progress has been made to commercialize a-IGZO for electronic circuit applications mainly because a-IGZO transistors are not yet capable of operating at gigahertz frequencies Here, nanoscale a-IGZO thin-film transistors (TFTs) are fabricated on a high-resistivity silicon substrate with a Ta2O5 gate dielectric Carrier mobilities up to 182 cm2V−1s−1 have been achieved By optimization of the TFT channel length and contact overlap, we are able to demonstrate current gain and power gain cutoff frequencies at 124 and 114 GHz, respectively, both beyond the 1-GHz benchmark Such a performance may have implications in developing at least medium performance, a-IGZO-TFTs-based circuits for low-cost or flexible electronics

On Raman scattering cross section ratio of crystalline and microcrystalline to amorphous silicon

Abstract: In this letter, we report on accurate comparative measurements of Raman scattering from bulk crystalline Si and from hydrogenated amorphous Si thin films before and after their pulse laser annealing, performed for the purpose of Si crystalline grain formation. Being accompanied by the respective optical transmittance/reflectance measurements, these data allowed us to estimate the integrated Raman scattering cross section ratios of crystalline and microcrystalline Si to hydrogenated amorphous Si and to compare the results with those known from the literature. For crystalline Si, the obtained ratio is equal to 0.75, while for microcrystalline Si, it is equal to at least 2. Our results are found to contradict the proposed earlier exponential decay dependence of the integrated Raman scattering cross section ratio of microcrystalline to amorphous Si on the crystalline grain size. The physical reasons, which support our findings, are discussed.

Investigation of the thermal stability of MoOx as hole-selective contacts for Si solar cells

Abstract: The stoichiometry and work function of molybdenum oxide (MoOx) are of crucial importance for its performance as hole selective contact for crystalline silicon solar cells. Hydrogenated amorphous silicon (a-Si:H) is typically used as an interface passivation layer in combination with MoOx to reduce surface recombination. As the fabrication process of a solar cell typically contains subsequent high-temperature processes, the consideration of thermal stability of MoOx with and without a-Si:H becomes critical. In this work, in situ x-ray spectroscopy (XPS)/ultraviolet photoelectron spectroscopy and Fourier transform infrared spectroscopy in the temperature range from 300 K to 900 K are used to investigate the thermal stability of MoOx with and without a-Si:H. In addition, both the passivation and contact performance are studied by evaluating the surface saturation current density J0s, carrier lifetime τeff, and contact resistivity ρc. The XPS results reveal that the as-evaporated MoOx on top of both c-Si and a-Si:H is sub-stoichiometric, and the work function of both films is higher than 6 eV. While after in situ annealing, the evolution of MoOx phase on top of a-Si:H shows a different behavior compared to it on c-Si which is attributed to H diffusion from a-Si:H after 600 K, whereas the work function shows a similar trend as a function of the annealing temperature. The J0s of a p-type Si symmetrically passivated by MoOx is found to be 187 fA/cm2 and the ρc is ∼82.5 mΩ·cm2 in the as-evaporated state. With a-Si interface passivation layer, J0s is significantly lower at 5.39 fA/cm2. The J0s and the ρc increase after post-deposition annealing. The evolution of these functional properties can be attributed to the material properties.

Investigations of Si Thin Films as Anode of Lithium-Ion Batteries

Abstract: Amorphous silicon thin films having various thicknesses were investigated as a negative electrode material for lithium-ion batteries. Electrochemical characterization of the 20 nm thick thin silicon film revealed a very low first cycle Coulombic efficiency, which can be attributed to the silicon oxide layer formed on both the surface of the as-deposited Si thin film and the interface between the Si and the substrate. Among the investigated films, the 100 nm Si thin film demonstrated the best performance in terms of first cycle efficiency and cycle life. Observations from scanning electron microscopy demonstrated that the generation of cracks was inevitable in the cycled Si thin films, even as the thickness of the film was as little as 20 nm, which was not predicted by previous modeling work. However, the cycling performance of the 20 and 100 nm silicon thin films was not detrimentally affected by these cracks. The poor capacity retention of the 1 μm silicon thin film was attributed to the delamination.