Showing papers on "Doping published in 2017"

Ce3+-Doped garnet phosphors: composition modification, luminescence properties and applications.

Abstract: Garnets have the general formula of A3B2C3O12 and form a wide range of inorganic compounds, occurring both naturally (gemstones) and synthetically. Their physical and chemical properties are closely related to the structure and composition. In particular, Ce3+-doped garnet phosphors have a long history and are widely applied, ranging from flying spot cameras, lasers and phosphors in fluorescent tubes to more recent applications in white light LEDs, as afterglow materials and scintillators for medical imaging. Garnet phosphors are unique in their tunability of the luminescence properties through variations in the {A}, [B] and (C) cation sublattice. The flexibility in phosphor composition and the tunable luminescence properties rely on design and synthesis strategies for new garnet compositions with tailor-made luminescence properties. It is the aim of this review to discuss the variation in luminescence properties of Ce3+-doped garnet materials in relation to the applications. This review will provide insight into the relation between crystal chemistry and luminescence for the important class of Ce3+-doped garnet phosphors. It will summarize previous research on the structural design and optical properties of garnet phosphors and also discuss future research opportunities in this field.

Organic long persistent luminescence

Abstract: Long persistent luminescence (LPL) materials-widely commercialized as 'glow-in-the-dark' paints-store excitation energy in excited states that slowly release this energy as light At present, most LPL materials are based on an inorganic system of strontium aluminium oxide (SrAl2O4) doped with europium and dysprosium, and exhibit emission for more than ten hours However, this system requires rare elements and temperatures higher than 1,000 degrees Celsius during fabrication, and light scattering by SrAl2O4 powders limits the transparency of LPL paints Here we show that an organic LPL (OLPL) system of two simple organic molecules that is free from rare elements and easy to fabricate can generate emission that lasts for more than one hour at room temperature Previous organic systems, which were based on two-photon ionization, required high excitation intensities and low temperatures By contrast, our OLPL system-which is based on emission from excited complexes (exciplexes) upon the recombination of long-lived charge-separated states-can be excited by a standard white LED light source and generate long emission even at temperatures above 100 degrees Celsius This OLPL system is transparent, soluble, and potentially flexible and colour-tunable, opening new applications for LPL in large-area and flexible paints, biomarkers, fabrics, and windows Moreover, the study of long-lived charge separation in this system should advance understanding of a wide variety of organic semiconductor devices

Influence of iron doping on tetravalent nickel content in catalytic oxygen evolving films

Abstract: Iron doping of nickel oxide films results in enhanced activity for promoting the oxygen evolution reaction (OER). Whereas this enhanced activity has been ascribed to a unique iron site within the nickel oxide matrix, we show here that Fe doping influences the Ni valency. The percent of Fe3+ doping promotes the formation of formal Ni4+, which in turn directly correlates with an enhanced activity of the catalyst in promoting OER. The role of Fe3+ is consistent with its behavior as a superior Lewis acid.

Dopant compensation in alloyed CH 3 NH 3 PbBr 3-x Cl x perovskite single crystals for gamma-ray spectroscopy

Abstract: Organic–inorganic halide perovskites (OIHPs) bring an unprecedented opportunity for radiation detection with their defect-tolerance nature, large mobility–lifetime product, and simple crystal growth from solution. Here we report a dopant compensation in alloyed OIHP single crystals to overcome limitations of device noise and charge collection, enabling γ-ray spectrum collection at room temperature. CH3NH3PbBr3 and CH3NH3PbCl3 are found to be p-type and n-type doped, respectively, whereas dopant-compensated CH3NH3PbBr2.94Cl0.06 alloy has over tenfold improved bulk resistivity of 3.6 × 109 Ω cm. Alloying also increases the hole mobility to 560 cm2 V−1 s−1, yielding a high mobility–lifetime product of 1.8 × 10−2 cm2 V−1. The use of a guard ring electrode in the detector reduces the crystal surface leakage current and device dark current. A distinguishable 137Cs energy spectrum with comparable or better resolution than standard scintillator detectors is collected under a small electric field of 1.8 V mm−1 at room temperature. Hybrid organic–inorganic perovskite single crystals with optimized combination of Cl and Br ions are used to fabricate γ-ray detectors operating at room temperature and competing with the performance of sodium iodide scintillators.

C3N—A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties

Abstract: Graphene has initiated intensive research efforts on 2D crystalline materials due to its extraordinary set of properties and the resulting host of possible applications. Here the authors report on the controllable large-scale synthesis of C3 N, a 2D crystalline, hole-free extension of graphene, its structural characterization, and some of its unique properties. C3 N is fabricated by polymerization of 2,3-diaminophenazine. It consists of a 2D honeycomb lattice with a homogeneous distribution of nitrogen atoms, where both N and C atoms show a D6h -symmetry. C3 N is a semiconductor with an indirect bandgap of 0.39 eV that can be tuned to cover the entire visible range by fabrication of quantum dots with different diameters. Back-gated field-effect transistors made of single-layer C3 N display an on-off current ratio reaching 5.5 × 1010 . Surprisingly, C3 N exhibits a ferromagnetic order at low temperatures (<96 K) when doped with hydrogen. This new member of the graphene family opens the door for both fundamental basic research and possible future applications.

Engineering Interfacial Charge Transfer in CsPbBr3 Perovskite Nanocrystals by Heterovalent Doping

Abstract: Since compelling device efficiencies of perovskite solar cells have been achieved, investigative efforts have turned to understand other key challenges in these systems, such as engineering interfacial energy-level alignment and charge transfer (CT). However, these types of studies on perovskite thin-film devices are impeded by the morphological and compositional heterogeneity of the films and their ill-defined surfaces. Here, we use well-defined ligand-protected perovskite nanocrystals (NCs) as model systems to elucidate the role of heterovalent doping on charge-carrier dynamics and energy level alignment at the interface of perovskite NCs with molecular acceptors. More specifically, we develop an in situ doping approach for colloidal CsPbBr3 perovskite NCs with heterovalent Bi3+ ions by hot injection to precisely tune their band structure and excited-state dynamics. This synthetic method allowed us to map the impact of doping on CT from the NCs to different molecular acceptors. Using time-resolved spect...

Controlling Molecular Doping in Organic Semiconductors

Abstract: The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping.

One step synthesis of oxygen doped porous graphitic carbon nitride with remarkable improvement of photo-oxidation activity: Role of oxygen on visible light photocatalytic activity

Abstract: A novel metal-free oxygen doped porous graphitic carbon nitride (OA-g-C3N4) was synthesized by condensation of oxalic acid and urea. The 40% OA-g-C3N4 catalyst can degrade bisphenol A (15 mg L−1) in 240 min with a mineralization rate as high as 56%. The markedly higher visible-light-driven oxidation activity of OA-g-C3N4 is attributed to the porous morphology and unique electrical structure. The porous structure of OA-g-C3N4 provides more active sites for adsorption and degradation of pollutants. Moreover, oxygen atoms in the tri-s-triazine units help to extend sufficient light absorption range up to 700 nm, improve the separation of charge-carriers and alter the position of valence band (VB) and conduction band (CB). The VB edge shifts from 1.95 eV to 2.46 eV due to the incorporation of O atoms, which leads to the change of active species in the photocatalytic reaction. Trapping experiment shows that superoxide radicals play the major role in the photocatalytic degradation of BPA on g-C3N4, while hydroxyl radical is the dominant active species in the photocatalytic degradation process over 40% OA-g-C3N4. This study presents a simple, economical and environment-friendly method to synthesized oxygen doped porous graphitic carbon nitride.

Doping Mn2+ in Lead Halide Perovskite Nanocrystals: Successes and Challenges

Abstract: Mn2+ ions doped in high-energy absorbing semiconductor host nanocrystals take away the exciton energy and result in spin-polarized d–d emission. For the last three decades this has been widely studied on group II–VI semiconductors. Recently, the doping has been extended to CsPbX3 perovskite nanocrystals. Although the optical transition follows a similar principle, in which the exciton energy is transferred to dopant Mn d-state, doping in perovskite also revealed several new fundamental aspects of doping and dopant-induced new optical properties. Here, anions which mostly tune the band gap controlled the fate of the appearance of Mn emission. Also, the doping process was observed to be different than traditional growth doping. Hence, in perovskite host nanocrystals, while some aspects of Mn doping are found to be in agreement with previous findings, some new facts also surfaced. Combining all these facts, this Perspective focuses on the journey of Mn doping from group II–VI semiconductors to lead halide pe...

Strontium-Doped Low-Temperature-Processed CsPbI2Br Perovskite Solar Cells

Abstract: Cesium (Cs) metal halide perovskites for photovoltaics have gained research interest due to their better thermal stability compared to their organic–inorganic counterparts. However, demonstration of highly efficient Cs-based perovskite solar cells requires high annealing temperature, which limits their use in multijunction devices. In this work, low-temperature-processed cesium lead (Pb) halide perovskite solar cells are demonstrated. We have also successfully incorporated the less toxic strontium (Sr) at a low concentration that partially substitutes Pb in CsPb1–xSrxI2Br. The crystallinity, morphology, absorption, photoluminescence, and elemental composition of this low-temperature-processed CsPb1–xSrxI2Br are studied. It is found that the surface of the perovskite film is enriched with Sr, providing a passivating effect. At the optimal concentration (x = 0.02), a mesoscopic perovskite solar cell using CsPb0.98Sr0.02I2Br achieves a stabilized efficiency at 10.8%. This work shows the potential of inorgani...

A two-dimensional Fe-doped SnS2 magnetic semiconductor.

Abstract: Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. In this study, we present a high-quality Fe-doped SnS2 monolayer exfoliated using a micromechanical cleavage method. Fe atoms were doped at the Sn atom sites, and the Fe contents are ∼2.1%, 1.5%, and 1.1%. The field-effect transistors based on the Fe0.021Sn0.979S2 monolayer show n-type behavior and exhibit high optoelectronic performance. Magnetic measurements show that pure SnS2 is diamagnetic, whereas Fe0.021Sn0.979S2 exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ~31 K. Density functional theory calculations show that long-range ferromagnetic ordering in the Fe-doped SnS2 monolayer is energetically stable, and the estimated Curie temperature agrees well with the results of our experiment. The results suggest that Fe-doped SnS2 has significant potential in future nanoelectronic, magnetic, and optoelectronic applications. 2D materials can be doped with magnetic atoms in order to boost their potential applications in spintronics. Here, the authors fabricate Fe-doped SnS2 monolayers and show that Fe0.021Sn0.979S2 exhibits ferromagnetic behaviour with perpendicular anisotropy at 2 K, and a Curie temperature of 31 K.

Recent Advances in Atomic Metal Doping of Carbon-based Nanomaterials for Energy Conversion.

Abstract: Nanostructured metal-contained catalysts are one of the most widely used types of catalysts applied to facilitate some of sluggish electrochemical reactions. However, the high activity of these catalysts cannot be sustained over a variety of pH ranges. In an effort to develop highly active and stable metal-contained catalysts, various approaches have been pursued with an emphasis on metal particle size reduction and doping on carbon-based supports. These techniques enhances the metal-support interactions, originating from the chemical bonding effect between the metal dopants and carbon support and the associated interface, as well as the charge transfer between the atomic metal species and carbon framework. This provides an opportunity to tune the well-defined metal active centers and optimize their activity, selectivity and stability of this type of (electro)catalyst. Herein, recent advances in synthesis strategies, characterization and catalytic performance of single atom metal dopants on carbon-based nanomaterials are highlighted with attempts to understand the electronic structure and spatial arrangement of individual atoms as well as their interaction with the supports. Applications of these new materials in a wide range of potential electrocatalytic processes in renewable energy conversion systems are also discussed with emphasis on future directions in this active field of research.

Morphology controls the thermoelectric power factor of a doped semiconducting polymer

Abstract: The electrical performance of doped semiconducting polymers is strongly governed by processing methods and underlying thin-film microstructure. We report on the influence of different doping methods (solution versus vapor) on the thermoelectric power factor (PF) of PBTTT molecularly p-doped with F n TCNQ (n = 2 or 4). The vapor-doped films have more than two orders of magnitude higher electronic conductivity (σ) relative to solution-doped films. On the basis of resonant soft x-ray scattering, vapor-doped samples are shown to have a large orientational correlation length (OCL) (that is, length scale of aligned backbones) that correlates to a high apparent charge carrier mobility (μ). The Seebeck coefficient (α) is largely independent of OCL. This reveals that, unlike σ, leveraging strategies to improve μ have a smaller impact on α. Our best-performing sample with the largest OCL, vapor-doped PBTTT:F4TCNQ thin film, has a σ of 670 S/cm and an α of 42 μV/K, which translates to a large PF of 120 μW m-1 K-2. In addition, despite the unfavorable offset for charge transfer, doping by F2TCNQ also leads to a large PF of 70 μW m-1 K-2, which reveals the potential utility of weak molecular dopants. Overall, our work introduces important general processing guidelines for the continued development of doped semiconducting polymers for thermoelectrics.

Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

Abstract: Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

Abstract: Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the beta-(Al0.2Ga0.8)2O3/ Ga2O3 material system could enable heterojunction devices for high performance electronics.

Photocatalytic hydrogen production using mesoporous TiO2 doped with Pt

Abstract: A series of mesoporous TiO 2 (meso-TiO 2 ) were synthesized using the sol-gel technique. A Pluronic F127 triblock-copolymer, a structure-directing agent, was incorporated as a soft template into the sol-gel. In addition, and during a separate synthesis, the sol-gel was doped with a Pt precursor. Semiconductors were prepared with 1.00 wt.%, 2.50 wt.%, 5.00 wt.% Pt nominal loadings, respectively. They were calcined at 500 °C and 550 °C following synthesis. Morphological and structural properties were studied by: a) X-ray diffraction, b) UV–vis spectrophotometry, c) N 2 adsorption-desorption (BET, BJH), and d) X-ray photoelectron spectroscopy (XPS). Optical band gap values for meso-TiO 2 and Pt-meso-TiO 2 were calculated by Kubelka-Munk (K-M) function coupled with Tauc plot methodology. It was observed that the prepared semiconductors displayed pore sizes in the 10–40 nm range with bimodal distributions. Their photocatalytic activity for hydrogen production via water splitting was established in a Photo-CREC Water-II reactor under near-UV light irradiation. The aqueous solution contained 2% v/v ethanol, employed as a renewable organic scavenger. The prepared semiconductors showed that the mesoporous 2.50 wt.% Pt-TiO 2 has the highest photoactivity for hydrogen generation. This suggests the important role played by the loading of platinum as a TiO 2 dopant, reducing the optical band gap, increasing electron storage and diminishing, as a result, electron-hole recombination. The measured Quantum Yield (QY), obtained using a rigorous approach, was established for the mesoporous 2.50 wt.% Pt-TiO 2 at a promising level of 22.6%.

Oriented built-in electric field introduced by surface gradient diffusion doping for enhanced photocatalytic H2 evolution in CdS nanorods

Abstract: Element doping has been extensively attempted to develop visible-light-driven photocatalysts, which introduces impurity levels and enhances light absorption However, the dopants can also become recombination centers for photogenerated electrons and holes To address the recombination challenge, we report a gradient phosphorus-doped CdS (CdS-P) homojunction nanostructure, creating an oriented built-in electric-field for efficient extraction of carriers from inside to surface of the photocatalyst The apparent quantum efficiency (AQY) based on the cocatalyst-free photocatalyst is up to 82% at 420 nm while the H2 evolution rate boosts to 1943 μmol·h–1·mg–1, which is 583 times higher than that of pristine CdS This concept of oriented built-in electric field introduced by surface gradient diffusion doping should provide a new approach to design other types of semiconductor photocatalysts for efficient solar-to-chemical conversion

Gradient doping of phosphorus in Fe2O3 nanoarray photoanodes for enhanced charge separation

Abstract: Hematite (α-Fe2O3) is a promising candidate for solar-to-hydrogen energy conversion. However, the low carrier mobility and extremely high charge recombination rate limit the practical application of hematite in solar water splitting. This paper describes the fabrication of a Fe2O3 photoanode with gradient incorporation of phosphorus (P) employing a facile dipping and annealing method to improve the charge separation for enhanced photoelectrochemical water oxidation. This gradient P incorporation increases the width of band bending over a large region in Fe2O3, which is crucial for promoting the charge separation efficiency in the bulk. Although both gradient and homogeneous P-incorporated Fe2O3 samples exhibit similar electrical conductivity, the Fe2O3 electrode with a gradient P concentration presents an additional charge separation effect. A photocurrent of ∼1.48 mA cm−2 is obtained at 1.23 V vs. reversible hydrogen electrode (vs. RHE) under air mass 1.5G illumination. Additionally, the H2O oxidation kinetics of Fe2O3 with gradient P incorporation was further improved upon loading cobalt phosphate as cocatalyst, reaching a photocurrent of ∼2.0 mA cm−2 at 1.23 V vs. RHE.

Luminescence, Plasmonic, and Magnetic Properties of Doped Semiconductor Nanocrystals.

Abstract: Introducing a few atoms of impurities or dopants in semiconductor nanocrystals can drastically alter the existing properties or even introduce new properties For example, mid-gap states created by doping tremendously affect photocatalytic activities and surface controlled redox reactions, generate new emission centers, show thermometric optical switching, make FRET donors by enhancing the excited state lifetime, and also create localized surface plasmon resonance induced low energy absorption In addition, researchers have more recently started focusing their attention on doped nanocrystals as an important and alternative material for solar energy conversion to meet the current demand for renewable energy Moreover, the electrical and magnetic properties of the host are also strongly altered on doping These beneficial dopant-induced changes suggest that doped nanocrystals with proper selections of dopant-host pairs may be helpful for generating designer materials for a wide range of current technological needs How properties relate to the doping of a variety of semiconductor nanocrystals are summarized in this Review

Morphology and Doping Engineering of Sn-Doped Hematite Nanowire Photoanodes

Abstract: High-temperature activation has been commonly used to boost the photoelectrochemical (PEC) performance of hematite nanowires for water oxidation, by inducing Sn diffusion from fluorine-doped tin oxide (FTO) substrate into hematite. Yet, hematite nanowires thermally annealed at high temperature suffer from two major drawbacks that negatively affect their performance. First, the structural deformation reduces light absorption capability of nanowire. Second, this “passive” doping method leads to nonuniform distribution of Sn dopant in nanowire and limits the Sn doping concentration. Both factors impair the electrochemical properties of hematite nanowire. Here we demonstrate a silica encapsulation method that is able to simultaneously retain the hematite nanowire morphology even after high-temperature calcination at 800 °C and improve the concentration and uniformity of dopant distribution along the nanowire growth axis. The capability of retaining nanowire morphology allows tuning the nanowire length for opt...

Revealing hidden antiferromagnetic correlations in doped Hubbard chains via string correlators.

Abstract: Topological phases, like the Haldane phase in spin-1 chains, defy characterization through local order parameters. Instead, nonlocal string order parameters can be employed to reveal their hidden order. Similar diluted magnetic correlations appear in doped one-dimensional lattice systems owing to the phenomenon of spin-charge separation. Here we report on the direct observation of such hidden magnetic correlations via quantum gas microscopy of hole-doped ultracold Fermi-Hubbard chains. The measurement of nonlocal spin-density correlation functions reveals a hidden finite-range antiferromagnetic order, a direct consequence of spin-charge separation. Our technique, which measures nonlocal order directly, can be readily extended to higher dimensions to study the complex interplay between magnetic order and density fluctuations.

Enhancing CO2 electrolysis through synergistic control of non-stoichiometry and doping to tune cathode surface structures

Abstract: Sustainable future energy scenarios require significant efficiency improvements in both electricity generation and storage. High-temperature solid oxide cells, and in particular carbon dioxide electrolysers, afford chemical storage of available electricity that can both stabilize and extend the utilization of renewables. Here we present a double doping strategy to facilitate CO2 reduction at perovskite titanate cathode surfaces, promoting adsorption/activation by making use of redox active dopants such as Mn linked to oxygen vacancies and dopants such as Ni that afford metal nanoparticle exsolution. Combined experimental characterization and first-principle calculations reveal that the adsorbed and activated CO2 adopts an intermediate chemical state between a carbon dioxide molecule and a carbonate ion. The dual doping strategy provides optimal performance with no degradation being observed after 100 h of high-temperature operation and 10 redox cycles, suggesting a reliable cathode material for CO2 electrolysis.

Metal‐Ion (Fe, V, Co, and Ni)‐Doped MnO2 Ultrathin Nanosheets Supported on Carbon Fiber Paper for the Oxygen Evolution Reaction

Abstract: Manganese dioxides (MnO2) are considered one of the most attractive materials as an oxygen evolution reaction (OER) electrode due to its low cost, natural abundance, easy synthesis, and environmental friendliness. Here, metal-ion (Fe, V, Co, and Ni)-doped MnO2 ultrathin nanosheets electrodeposited on carbon fiber paper (CFP) are fabricated using a facile anodic co-electrodeposition method. A high density of nanoclusters is observed on the surface of the carbon fibers consisting of doped MnO2 ultrathin nanosheets with an approximate thickness of 5 nm. It is confirmed that the metal ions (Fe, V, Co, and Ni) are doped into MnO2, improving the conductivity of MnO2. The doped MnO2 ultrathin nanosheet/CFP and the IrO2/CFP composite electrodes for OER achieve a low overpotential of 390 and 245 mV to reach 10 mA cm−2 in 1 m KOH, respectively. The potential of the doped composite electrode for long-term OER at a constant current density of 20 mA cm−2 is much lower than that of the pure MnO2 composite electrode.