I. Ilyashenko

TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.

TL;DR: In this paper, the authors summarized the final results obtained by the RD48 collaboration, focusing on the more practical aspects directly relevant for LHC applications, including the changes of the effective doping concentration (depletion voltage) and the dependence of radiation effects on fluence, temperature and operational time.

TL;DR: In this paper, the authors describe an evaporative system used to cool the silicon detector structures of the inner detector sub-detectors of the ATLAS experiment at the CERN Large Hadron Collider.

TL;DR: The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors are reviewed and discussed in this work as mentioned in this paper, which includes the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors.

TL;DR: The CERN RD50 collaboration as mentioned in this paper is working on the development of semiconductor sensors matching the requirements of the SLHC experiments, which includes 3D, Semi-3D and thin detectors.