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Rao Tummala

Researcher at Georgia Institute of Technology

Publications -  628
Citations -  12781

Rao Tummala is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Interposer & Capacitor. The author has an hindex of 43, co-authored 623 publications receiving 11663 citations. Previous affiliations of Rao Tummala include Qualcomm & IBM.

Papers
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Proceedings ArticleDOI

Recent Advances in Ceramic Composite Substrate Materials for High-Density and High Reliability Packaging Applications

TL;DR: In this paper, a large-area carbon-silicon carbide (C-SiC) based composite board material was evaluated for high-stiffness low-CTE and high-density wiring on the board.
Proceedings ArticleDOI

Robust extraction of the frequency-dependent characteristic impedance of transmission lines using one-port TDR measurements

TL;DR: In this paper, a method for extracting the frequency dependent characteristic impedance of transmission lines from Time Domain Reflectometry (TDR) measurements using an Open, Short, Load, and Shortline calibration was proposed.
Patent

Reactively formed integrated capacitors on organic substrates and fabrication methods

TL;DR: In this paper, organic-compatible thin film processing techniques with reactive (such as Ti) layers for embedding capacitors into substrates have been discussed, and a reaction with the intermediate layer and a foil transfer process may be used to integrate perovskite thin films with a capacitance in the range of 1-5 μF/cm 2.
Proceedings ArticleDOI

Interconnection materials, processes and tools for fine-pitch panel assembly of ultra-thin glass substrates

TL;DR: In this article, a set of no-flow snap-cure underfill materials with high thermal stability, beyond existing conductive films or pastes, was developed in synergy with tools and processes for compatibility with advanced substrate technologies.
Proceedings ArticleDOI

Thin film power components with nanoscale electrodes and conformal dielectrics

TL;DR: In this article, the first proof-of-concept demonstration of a novel silicon-compatible high-density capacitor technology was reported, where the key novelty stems from the tremendous enhancement in surface area from porous copper nanoelectrodes and conformal alumina dielectric.