R
Rao Tummala
Researcher at Georgia Institute of Technology
Publications - 628
Citations - 12781
Rao Tummala is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Interposer & Capacitor. The author has an hindex of 43, co-authored 623 publications receiving 11663 citations. Previous affiliations of Rao Tummala include Qualcomm & IBM.
Papers
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Proceedings ArticleDOI
Reliability modeling of silicon or glass interposers to printed wiring board interconnections
TL;DR: In this article, the authors present an approach to address these reliability problems by using novel build-up dielectrics with low Young's Modulus to reduce the strains induced in the solder ball interconnections to the board.
Proceedings ArticleDOI
Evaluation and characterization of high-performance filling encapsulants for system chips application
TL;DR: In this paper, a filling encapsulant based on epoxy resin is used to connect the different chip sector macros that make up the system chip, which remains thermally stable through the subsequent processing temperature hierarchies during the system chips fabrication.
Proceedings ArticleDOI
Synthesis of magneto-dielectrics from first principles and antenna design
Kyu Han,Madhavan Swaminathan,P. Markondeya Raj,Himani Sharma,Rao Tummala,Brandon M. Rawlings,Songnan Yang,Vijay K. Nair +7 more
TL;DR: In this paper, a combination of Bruggeman's effective medium model and Sihvola and Lindell model is used to find the right mixture of cobalt particles and fluoropolymer material for the effective antenna miniaturization.
Proceedings ArticleDOI
Organic-Based RF Capacitors with Ceramic-Like Properties
Jin-Hyun Hwang,Pulugurtha Markondeya Raj,I.R. Abothu,Chong Yoon,M. Iyer,Hyung-Mi Jung,Jong-Kuk Hong,Rao Tummala +7 more
Abstract: RF capacitor applications for filtering and signal matching need stringent tolerances in Temperature Coefficient of Capacitance (TCC) and Quality factor (Q). In this paper, the temperature dependence of the dielectric properties of polymer-ceramic composites was discussed, with particular emphasis on high Q polymers and paraelectric ceramic particles. This includes the important role of ceramic paraelectric particles such as A12O3, SiO2, Ta2O5 etc. as ceramic fillers and high Q polymers such as benzocyclobutene (BCB) in the development of high Q and low TCC dielectrics for embedded RF capacitors. High Q polymer by itself showed a negative TCC of about -250 ppm/ degC but the composite approach with A12O3, SiO2 and Ta2O5 fillers improved the TCC to -190, -130, +20 ppm/ degC , respectively, between temperatures ranging from room temperature to 125degC. Liquid coatable high Q polymer-based composites with 3-4X improvement in dielectric constant and nearly-zero TCC of approximately within plusmn30 ppm/degC were developed with Ta2O5 as the inorganic filler. This effect can be ascribed to the TCC compensation between negative TCC of high Q polymer and the positive TCC of paraelectric ceramic particle selected. The distribution of the particles in the polymer matrix is also a crucial aspect of this application.
Patent
Microelectronic package and semiconductor package circuits
TL;DR: In this article, a stress relief barrier is proposed to reduce effects of stress caused by different coefficients of thermal expansion, and acts as an adhesion promoter between a metallization and an interposer.