Philips

About: Philips is a company organization based out in Vantaa, Finland. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 68260 authors who have published 99663 publications receiving 1882329 citations. The organization is also known as: Koninklijke Philips Electronics N.V. & Royal Philips Electronics.

Quantum Transport in Semiconductor Nanostructures

Abstract: Publisher Summary Quantum transport is conveniently studied in a two-dimensional electron gas (2DEG) because of the combination of a large Fermi wavelength and large mean free path. Semiconductor nanostructures are unique in offering the possibility of studying quantum transport in an artificial potential landscape. This is the regime of ballistic transport in which scattering with impurities are neglected. The chapter presents a self-contained account of these three novel transport regimes in semiconductor nanostructures. The study of quantum transport in semiconductor nanostructures is motivated by more than scientific interest. The fabrication of nanostructures relies on sophisticated crystal growth and lithographic techniques that exist because of the industrial effort toward the miniaturization of transistors. Conventional transistors operate in the regime of classical diffusive transport, which breaks down on short length scales. The discovery of novel transport regimes in semiconductor nanostructures provides options for the development of innovative future devices.

High-performance solution-processed polymer ferroelectric field-effect transistors

Abstract: We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor material. The on- and off-state drain currents differ by several orders of magnitude, and have a long retention time, a high programming cycle endurance and short programming time. The remanent semiconductor surface charge density in the on-state has a high value of 18 mC m−2, which explains the large on/off ratio. Application of a moderate gate field raises the surface charge to 26 mC m−2, which is of a magnitude that is very difficult to obtain with conventional FETs because they are limited by dielectric breakdown of the gate insulator. In this way, the present ferroelectric–semiconductor interface extends the attainable field-effect band bending in organic semiconductors.

A revolution in lighting

Abstract: Key materials discoveries have prompted the rise of inorganic light-emitting diodes in the lighting industry. Remaining challenges are being addressed to further extend the impact of this technology in lighting, displays and other applications.

A new recombination model for device simulation including tunneling

Abstract: A recombination model for device simulation that includes both trap-assisted tunneling (under forward and reverse bias) and band-to-band tunneling (Zener tunneling) is presented. The model is formulated in terms of analytical functions of local variables, which makes it easy to implement in a numerical device simulator. The trap-assisted tunneling effect is described by an expression that for weak electric fields reduces to the conventional Shockley-Read-Hall (SRH) expression for recombination via traps. Compared to the conventional SRH expression, the model has one extra physical parameter, the effective mass m*. For m*=0.25 m/sub 0/ the model correctly describes the experimental observations associated with tunneling. The band-to-band tunneling contribution is found to be important at room temperature for electric fields larger than 7*10/sup 5/ V/cm. For dopant concentrations above 5*10/sup 17/ cm/sup -3/ or, equivalently, for breakdown voltages below approximately 5 V, the reverse characteristics are dominated by band-to-band tunneling. >