Institution
Philips
Company•Vantaa, Finland•
About: Philips is a company organization based out in Vantaa, Finland. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 68260 authors who have published 99663 publications receiving 1882329 citations. The organization is also known as: Koninklijke Philips Electronics N.V. & Royal Philips Electronics.
Papers published on a yearly basis
Papers
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TL;DR: In this paper, the currentvoltage characteristics of poly(dialkoxy p-phenylene vinylene)-based hole-only devices are measured as a function of temperature and the hole current is space-charge limited, which provides a direct measurement of the hole mobility.
Abstract: The current-voltage characteristics of poly(dialkoxy p-phenylene vinylene)-based hole-only devices are measured as a function of temperature. The hole current is space-charge limited, which provides a direct measurement of the hole mobility ${\mathrm{\ensuremath{\mu}}}_{\mathrm{p}}$ as a function of electric field E and temperature. The hole mobility exhibits a field dependence ln ${\mathrm{\ensuremath{\mu}}}_{\mathrm{p}}$\ensuremath{\propto}$\sqrt{E}$ as has also been observed from time-of-flight experiments in many molecularly doped polymers and amorphous glasses. For the zero-field hole mobility an activation energy of 0.48 eV is obtained. The combination of a field-dependent mobility and space-charge effects provides a consistent description of the hole conduction in conjugated polymer films as a function of voltage, temperature, and layer thickness.
734 citations
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TL;DR: A detailed overview of the IEEE 802.22 draft specification, its architecture, requirements, applications, and coexistence considerations not only form the basis for the definition of this groundbreaking wireless air interface standard, but will also serve as foundation for future research in the promising area of CRs.
Abstract: In November/2004, we witnessed the formation of the first worldwide effort to define a novel wireless air interface (i.e., MAC and PHY) standard based on Cognitive Radios (CRs): the IEEE 802.22 Working Group (WG). The IEEE 802.22 WG is chartered with the development of a CR-based Wireless Regional Area Network (WRAN) Physical (PHY) and Medium Access Control (MAC) layers for use by license-exempt devices in the spectrum that is currently allocated to the Television (TV) service. Since 802.22 is required to reuse the fallow TV spectrum without causing any harmful interference to incumbents (i.e., the TV receivers), cognitive radio techniques are of primary importance in order to sense and measure the spectrum and detect the presence/absence of incumbent signals. On top of that, other advanced techniques that facilitate coexistence such as dynamic spectrum management and radio environment characterization could be designed. In this paper, we provide a detailed overview of the 802.22 draft specification, its architecture, requirements, applications, and coexistence considerations. These not only form the basis for the definition of this groundbreaking wireless air interface standard, but will also serve as foundation for future research in the promising area of CRs.
719 citations
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TL;DR: In this article, the self-assembly of one-dimensional semiconductor nanowires is used to bring new, high-performance nanowire devices as an add-on to mainstream Si technology.
717 citations
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TL;DR: In this paper, the authors used optical absorption measurements on uniformly doped silicon samples to determine the bandgap in silicon and used the bipolar transistor itself as the vehicle for measuring the band gap in the base.
Abstract: Theory predicts appreciable bandgap narrowing in silicon for impurity concentrations greater than about 1017 cm−3. This effect influences strongly the electrical behaviour of silicon devices, particularly the minority carrier charge storage and the minority carrier current flow in heavily doped regions. The few experimental data known are from optical absorption measurements on uniformly doped silicon samples. New experiments in order to determine the bandgap in silicon are described here. The bipolar transistor itself is used as the vehicle for measuring the bandgap in the base. Results giving the bandgap narrowing (ΔVg0) as a function of the impurity concentration (N) in the base (in the range of 4.1015–2.5 1019 cm−3) are discussed. The experimental values of ΔVg0 as a function of N can be fitted by: δV g0 = V 1 ln N N 0 + ln 2 N N 0 +C where V1, N0 and C are constants. It is also shown how the effective intrinsic carrier concentration (nie) is related with the bandgap narrowing (ΔVg0).
716 citations
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TL;DR: In this article, a photonic-crystal structure for superior optical mode control was proposed for blue light-emitting diodes with a light extraction efficiency of 73% using InGaN-GaN devices.
Abstract: Blue light-emitting diodes with a light extraction efficiency of 73% are reported. The InGaN–GaN devices use a photonic-crystal structure for superior optical mode control; their performance has been characterized experimentally and modelled theoretically.
716 citations
Authors
Showing all 68268 results
Name | H-index | Papers | Citations |
---|---|---|---|
Mark Raymond Adams | 147 | 1187 | 135038 |
Dario R. Alessi | 136 | 354 | 74753 |
Mohammad Khaja Nazeeruddin | 129 | 646 | 85630 |
Sanjay Kumar | 120 | 2052 | 82620 |
Mark W. Dewhirst | 116 | 797 | 57525 |
Carl G. Figdor | 116 | 566 | 52145 |
Mathias Fink | 116 | 900 | 51759 |
David B. Solit | 114 | 469 | 52340 |
Giulio Tononi | 114 | 511 | 58519 |
Jie Wu | 112 | 1537 | 56708 |
Claire M. Fraser | 108 | 352 | 76292 |
Michael F. Berger | 107 | 540 | 52426 |
Nikolaus Schultz | 106 | 297 | 120240 |
Rolf Müller | 104 | 905 | 50027 |
Warren J. Manning | 102 | 606 | 38781 |