Journal ArticleDOI
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Myoung-Jae Lee,Chang Bum Lee,Dongsoo Lee,Seung Ryul Lee,Man Chang,Ji-Hyun Hur,Young-Bae Kim,Chang-Jung Kim,David H. Seo,Sunae Seo,U-In Chung,In-Kyeong Yoo,Kinam Kim +12 more
TLDR
This work demonstrates a TaO(x)-based asymmetric passive switching device with which it was able to localize resistance switching and satisfy all aforementioned requirements, and eliminates any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.Abstract:
Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaO(x)-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 10(12). Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.read more
Citations
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Journal ArticleDOI
Learning through ferroelectric domain dynamics in solid-state synapses.
Sören Boyn,Sören Boyn,Julie Grollier,Gwendal Lecerf,Bin Xu,Nicolas Locatelli,Stéphane Fusil,Stéphanie Girod,Stéphanie Girod,C. Carrétéro,Karin Garcia,Stéphane Xavier,Jean Tomas,Laurent Bellaiche,Manuel Bibes,Agnès Barthélémy,Sylvain Saïghi,Vincent Garcia +17 more
TL;DR: This work reports on synapses based on ferroelectric tunnel junctions and shows that STDP can be harnessed from inhomogeneous polarization switching and demonstrates that conductance variations can be modelled by the nucleation-dominated reversal of domains.
Journal ArticleDOI
Robust memristors based on layered two-dimensional materials
Miao Wang,Songhua Cai,Chen Pan,Chenyu Wang,Xiaojuan Lian,Ye Zhuo,Kang Xu,Tianjun Cao,Xiaoqing Pan,Xiaoqing Pan,Xiaoqing Pan,Baigeng Wang,Shi-Jun Liang,Jianhua Yang,Peng Wang,Feng Miao +15 more
TL;DR: In this paper, the authors reported the realization of robust memristors for the first time based on van der Waals heterostructure of fully layered 2D materials and demonstrated a good thermal stability lacking in traditional memristor.
Journal ArticleDOI
Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor.
Feng Miao,John Paul Strachan,Jianhua Yang,M.-X. Zhang,Ilan Goldfarb,Antonio C. Torrezan,Peter Eschbach,Ronald D. Kelley,Gilberto Medeiros-Ribeiro,R. Stanley Williams +9 more
TL;DR: Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism in a resistive random access memory device.
Pattern classification by memristive crossbar circuits with ex-situ and in-situ training
TL;DR: In this paper, a single-layer perceptron network implemented with a memrisitive crossbar circuit and trained using the perceptron learning rule by ex situ and in situ methods is presented.
Journal ArticleDOI
Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
TL;DR: Recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon,Kyung-min Kim,Jae Hyuck Jang,Jong Myeong Jeon,Min Hwan Lee,Gun Hwan Kim,Xiang-Shu Li,Gyeong-Su Park,Bora Lee,Seungwu Han,Miyoung Kim,Cheol Seong Hwang +11 more
TL;DR: In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films.
Journal ArticleDOI
Carbon nanotube-based nonvolatile random access memory for molecular computing
TL;DR: A concept for molecular electronics exploiting carbon nanotubes as both molecular device elements and molecular wires for reading and writing information was developed and the viability of this concept is demonstrated by detailed calculations and by the experimental realization of a reversible, bistable nanotube-based bit.
Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
TL;DR: Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.