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Atomically thin MoS2: a new direct-gap semiconductor

TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
Abstract
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk material

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Citations
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Journal ArticleDOI

Optical Identification of Single- and Few-Layer MoS2 Sheets

TL;DR: Using an optical imaging method combined with image analysis software, a high-contrast image of the MoS₂ sheets can be extracted from the red (R) channel of the color optical microscopy image.
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Raman Shifts in Electron-Irradiated Monolayer MoS2

TL;DR: It is shown that irradiation causes partial removal of sulfur and the dependence of the Raman peak shifts with S vacancy density is quantitatively correlated with vacancy concentration, as rationalized by first-principles density functional theory calculations.
Journal ArticleDOI

Tuning Electronic Structure of Bilayer MoS2 by Vertical Electric Field: A First-Principles Investigation

TL;DR: In this paper, the effect of vertical electric field on the electronic structure of bilayer MoS2 bilayer was systematically examined by means of density functional theory computations, and it was shown that the bandgaps of the bilayer bilayer monotonically decrease with an increasing voltage.
Journal ArticleDOI

Spin-orbit?induced spin splittings in polar transition metal dichalcogenide monolayers

TL;DR: In this paper, the structural stability and spin-orbit?induced spin splitting in the transition metal dichalcogenide monolayers MXY (M?=?Mo, W and X, Y? =?S, Se, Te) were investigated.
References
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Journal ArticleDOI

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

TL;DR: Graphene is established as the strongest material ever measured, and atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
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Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
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Emerging Photoluminescence in Monolayer MoS2

TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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Anomalous lattice vibrations of single- and few-layer MoS2.

TL;DR: This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime by characterized by Raman spectroscopy.
Journal ArticleDOI

The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

J.A. Wilson, +1 more
- 01 May 1969 - 
TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.
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