Atomically thin MoS2: a new direct-gap semiconductor
TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.Abstract:
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk materialread more
Citations
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The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory
TL;DR: In this article, the effect of interlayer interactions on the band structure and density of states using the screened hybrid functional of Heyd, Scuseria, and Ernzerhof was investigated.
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Reliable Exfoliation of Large-Area High-Quality Flakes of Graphene and Other Two-Dimensional Materials
Yuan Huang,Eli Sutter,Norman Nan Shi,Jiabao Zheng,Tianzhong Yang,Dirk Englund,Hong-Jun Gao,Peter Sutter +7 more
TL;DR: A modified approach for exfoliating thin monolayer and few-layer flakes from layered crystals, suggesting that this modified exfoliation method provides an effective way for producing large area, high-quality flakes of a wide range of 2D materials.
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PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics.
Akinola D. Oyedele,Shize Yang,Liangbo Liang,Alexander A. Puretzky,Kai Wang,Jingjie Zhang,Jingjie Zhang,Peng Yu,Pushpa Raj Pudasaini,Avik W. Ghosh,Zheng Liu,Christopher M. Rouleau,Bobby G. Sumpter,Matthew F. Chisholm,Wu Zhou,Philip D. Rack,Philip D. Rack,David B. Geohegan,Kai Xiao,Kai Xiao +19 more
TL;DR: Field-effect transistors made from the few-layer PdSe2 display tunable ambipolar charge carrier conduction with a high electron field-effect mobility of ∼158 cm2 V-1 s-1, indicating the promise of this anisotropic, air-stable, pentagonal 2D material for 2D electronics.
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Nanostructured Photodetectors: From Ultraviolet to Terahertz.
TL;DR: Recent advances in nanoscale photodetectors constructed by diverse low-dimensional nanostructured materials are discussed here; meanwhile, challenges and promising future directions in this research field are proposed.
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Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics
TL;DR: In this paper, the structural properties of 2D materials, such as defects and dopants, the number of layers, composition, phase, strain, and other structural characteristics, are discussed and analyzed.
References
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Emerging Photoluminescence in Monolayer MoS2
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TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.