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Atomically thin MoS2: a new direct-gap semiconductor

TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
Abstract
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk material

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Journal Article

Quantum emission from hexagonal boron nitride monolayers

TL;DR: In this article, the authors demonstrate first room temperature and ultrabright single photon emission from a color center in two-dimensional multilayer hexagonal boron nitride.
Journal ArticleDOI

Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2

TL;DR: In this paper, the Raman spectra of atomically thin sheets of WS2 and WSe2, isoelectronic compounds of MoS2, in the mono-to few-layer thickness regime were analyzed.
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Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating.

TL;DR: Few-layer black phosphorus is a recently isolated 2D semiconductor with direct bandgap, high mobility, large current on/off ratios and ambipolar operation, and electrostatic control of the local charge carrier type and density is demonstrated in the device.
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Valley Zeeman effect in elementary optical excitations of monolayer WSe2

TL;DR: The valley pseudospin of transition metal dichalcogenides has an extra degree of freedom associated with the shape of the energy bands and can be manipulated using magnetic fields as mentioned in this paper.
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Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

TL;DR: This work demonstrates large-area (>tens of micrometers) heterostructures of CVD-grown WS2 and MoS2 monolayers, where the interlayer interaction is externally tuned from noncoupling to strong coupling, which opens up venues to creating new material systems with rich functionalities and novel physical effects.
References
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Journal ArticleDOI

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

TL;DR: Graphene is established as the strongest material ever measured, and atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
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Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
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Emerging Photoluminescence in Monolayer MoS2

TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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Anomalous lattice vibrations of single- and few-layer MoS2.

TL;DR: This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime by characterized by Raman spectroscopy.
Journal ArticleDOI

The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

J.A. Wilson, +1 more
- 01 May 1969 - 
TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.
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