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Atomically thin MoS2: a new direct-gap semiconductor

TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
Abstract
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk material

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Dielectric Screening of Excitons and Trions in Single-Layer MoS2

TL;DR: These findings are helpful to better understand the tightly bound exciton properties in strongly quantum-confined systems and provide a simple approach to the selective and separate generation of excitons or trions with potential applications in excitonic interconnects and valleytronics.
Journal ArticleDOI

A two-dimensional π–d conjugated coordination polymer with extremely high electrical conductivity and ambipolar transport behaviour

TL;DR: Four-probe measurements show that the room temperature conductivity of this material can reach up to 1,580 S cm−1, which is the highest value ever reported for coordination polymers, and it displays ambipolar charge transport behaviour and extremely high electron and hole mobilities under field-effect modulation.
Journal ArticleDOI

MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High‐Detectivity, Self‐Driven Visible–Near Infrared Photodetectors

TL;DR: In this paper, a self-driven MoS2/Si heterojunction photodetector is proposed, which is sensitive to a broadband wavelength from visible light to near-infrared light, showing an extremely high detectivity up to ≈1013 Jones (Jones = cm Hz 1/2 W−1), and ultrafast response speed of ≈3 μs.
Journal ArticleDOI

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

TL;DR: In this article, a new class of semiconductors, monolayer transition-metal dichalcogenides, is proposed to improve the performance of a device's transceivers.
References
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Journal ArticleDOI

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

TL;DR: Graphene is established as the strongest material ever measured, and atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
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Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
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Emerging Photoluminescence in Monolayer MoS2

TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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Anomalous lattice vibrations of single- and few-layer MoS2.

TL;DR: This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime by characterized by Raman spectroscopy.
Journal ArticleDOI

The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

J.A. Wilson, +1 more
- 01 May 1969 - 
TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.
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