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Atomically thin MoS2: a new direct-gap semiconductor

TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
Abstract
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk material

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Citations
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Optically Pumped Two-Dimensional MoS2 Lasers Operating at Room-Temperature

TL;DR: By embedding 2D MoS2 at the interface between a free-standing microdisk and microsphere, this work has demonstrated, for the first time, room-temperature lasing from 2D TMDCs.
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Formation of a Stable p–n Junction in a Liquid-Gated MoS2 Ambipolar Transistor

TL;DR: A method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors and formed a bias-independent p- n junction, which could perform a crucial role in the development of optoelectronic valleytronic devices.
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MoS2/MX2 heterobilayers: bandgap engineering via tensile strain or external electrical field

TL;DR: In this article, the authors performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional transition-metal dichalcogenide (TMD) heterobilayers MX2/MoS2 (M = Mo, Cr, W; X = S, Se).
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Single‐Layer MoS2 Mechanical Resonators

TL;DR: Clear signatures of nonlinear resonance in these atomically thin resonators are demonstrated and these resonators behave as membranes with resonance frequencies in between 10 and 30 MHz and quality factors in between 16 and 109.
Journal ArticleDOI

Anomalous Light Cones and Valley Optical Selection Rules of Interlayer Excitons in Twisted Heterobilayers

TL;DR: It is shown that, because of the inevitable twist and lattice mismatch in heterobilayers of transition metal dichalcogenides, interlayer excitons have sixfold degenerate light cones anomalously located at finite velocities on the parabolic energy dispersion.
References
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Journal ArticleDOI

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

TL;DR: Graphene is established as the strongest material ever measured, and atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
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Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
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Emerging Photoluminescence in Monolayer MoS2

TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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Anomalous lattice vibrations of single- and few-layer MoS2.

TL;DR: This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime by characterized by Raman spectroscopy.
Journal ArticleDOI

The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

J.A. Wilson, +1 more
- 01 May 1969 - 
TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.
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