Atomically thin MoS2: a new direct-gap semiconductor
TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.Abstract:
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk materialread more
Citations
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Tunable Electronic and Optical Properties of Monolayer and Multilayer Janus MoSSe as a Photocatalyst for Solar Water Splitting: A First-Principles Study
TL;DR: In this paper, the authors investigated the geometry, electronic, and optical properties of the monolayer (ML) and multilayer Janus MoSSe with the first-principles calculations.
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Synthesis and Transfer of Large-Area Monolayer WS2 Crystals: Moving Toward the Recyclable Use of Sapphire Substrates
Zai-Quan Xu,Zai-Quan Xu,Yupeng Zhang,Shenghuang Lin,Shenghuang Lin,Changxi Zheng,Changxi Zheng,Yu Lin Lin Zhong,Xue Xia,Zhipeng Li,Ponraj Joice Sophia,Michael S. Fuhrer,Yi-Bing Cheng,Qiaoliang Bao,Qiaoliang Bao +14 more
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Steven A. Vitale,Daniel Nezich,Joseph O. Varghese,Philip Kim,Nuh Gedik,Pablo Jarillo-Herrero,Di Xiao,Mordechai Rothschild +7 more
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Controlled synthesis of single-crystal SnSe nanoplates
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References
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Emerging Photoluminescence in Monolayer MoS2
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TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.