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Open AccessJournal ArticleDOI

Atomically thin MoS2: a new direct-gap semiconductor

TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
Abstract
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk material

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Citations
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Atomically thin p–n junctions with van der Waals heterointerfaces

TL;DR: The tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes in atomically thin p-n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides.
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Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

TL;DR: In this paper, single-crystal islands and polycrystals containing tilt and mirror twin grain boundaries are characterized, and the influence of the grain boundaries on the material properties of molybdenum disulphide is assessed.
Journal ArticleDOI

Bandgap engineering of strained monolayer and bilayer MoS2.

TL;DR: A demonstration of strain engineering the band structure in the emergent class of two-dimensional crystals, transition-metal dichalcogenides, with pronounced strain-induced decrease in the photoluminescence intensity of monolayer MoS2 that is indicative of the direct-to-indirect transition of the character of the optical band gap.
Journal ArticleDOI

Van der Waals heterostructures and devices

TL;DR: In this paper, the authors review the recent progress and challenges of 2D van der Waals interactions and offer a perspective on the exploration of 2DLM-based vdWHs for future application in electronics and optoelectronics.
References
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Journal ArticleDOI

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

TL;DR: Graphene is established as the strongest material ever measured, and atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
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Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
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Emerging Photoluminescence in Monolayer MoS2

TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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Anomalous lattice vibrations of single- and few-layer MoS2.

TL;DR: This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime by characterized by Raman spectroscopy.
Journal ArticleDOI

The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

J.A. Wilson, +1 more
- 01 May 1969 - 
TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.
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