Atomically thin MoS2: a new direct-gap semiconductor
TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.Abstract:
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk materialread more
Citations
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Journal ArticleDOI
Atomically thin p–n junctions with van der Waals heterointerfaces
Chul Ho Lee,Chul Ho Lee,Gwan Hyoung Lee,Arend M. van der Zande,Wenchao Chen,Yilei Li,Minyong Han,Xu Cui,Ghidewon Arefe,Colin Nuckolls,Tony F. Heinz,Jing Guo,James Hone,Philip Kim +13 more
TL;DR: The tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes in atomically thin p-n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides.
Journal ArticleDOI
Vertical and in-plane heterostructures from WS2/MoS2 monolayers.
Yongji Gong,Junhao Lin,Xingli Wang,Gang Shi,Sidong Lei,Zhong Lin,Xiaolong Zou,Gonglan Ye,Robert Vajtai,Boris I. Yakobson,Humberto Terrones,Mauricio Terrones,Beng Kang Tay,Jun Lou,Sokrates T. Pantelides,Zheng Liu,Wu Zhou,Pulickel M. Ajayan +17 more
TL;DR: A one-step growth strategy for the creation of high-quality vertically stacked as well as in-plane interconnected heterostructures of WS2/MoS2 via control of the growth temperature is reported.
Journal ArticleDOI
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
Arend M. van der Zande,Pinshane Y. Huang,Daniel Chenet,Timothy C. Berkelbach,Yumeng You,Gwan Hyoung Lee,Gwan Hyoung Lee,Tony F. Heinz,David R. Reichman,David A. Muller,James Hone +10 more
TL;DR: In this paper, single-crystal islands and polycrystals containing tilt and mirror twin grain boundaries are characterized, and the influence of the grain boundaries on the material properties of molybdenum disulphide is assessed.
Journal ArticleDOI
Bandgap engineering of strained monolayer and bilayer MoS2.
Hiram Conley,Bin Wang,Bin Wang,Jed I. Ziegler,Jed I. Ziegler,Richard F. Haglund,Richard F. Haglund,Sokrates T. Pantelides,Sokrates T. Pantelides,Kirill I. Bolotin,Kirill I. Bolotin +10 more
TL;DR: A demonstration of strain engineering the band structure in the emergent class of two-dimensional crystals, transition-metal dichalcogenides, with pronounced strain-induced decrease in the photoluminescence intensity of monolayer MoS2 that is indicative of the direct-to-indirect transition of the character of the optical band gap.
Journal ArticleDOI
Van der Waals heterostructures and devices
TL;DR: In this paper, the authors review the recent progress and challenges of 2D van der Waals interactions and offer a perspective on the exploration of 2DLM-based vdWHs for future application in electronics and optoelectronics.
References
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