Atomically thin MoS2: a new direct-gap semiconductor
TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.Abstract:
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk materialread more
Citations
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Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ-2e Method)
Julia Gusakova,Xingli Wang,Li Lynn Shiau,A. V. Krivosheeva,Victor L. Shaposhnikov,Victor E. Borisenko,Vasilii Gusakov,Beng Kang Tay,Beng Kang Tay +8 more
TL;DR: In this paper, the authors proposed a GVJ-2e method, which is implemented within DFT framework without adjustable parameters and is based on the total energies only, and calculated band gaps are in very good agreement with experimental ones for both bulk and monolayer TMDs.
Journal ArticleDOI
Structural and quantum-state phase transition in van der Waals layered materials
TL;DR: Van der Waals layered transition metal dichalcogenides can exist in many different atomic and electronic phases, and the methods for triggering robust phase transitions between polymorphs are evolving and diversifying as mentioned in this paper.
Journal ArticleDOI
Titanium Trisulfide Monolayer: Theoretical Prediction of a New Direct‐Gap Semiconductor with High and Anisotropic Carrier Mobility
Jun Dai,Xiao Cheng Zeng +1 more
TL;DR: The desired electronic properties render the TiS3 monolayer a promising 2D atomic-layer material for applications in future nanoelectronics.
Journal ArticleDOI
Synthesis of WS2xSe2–2x Alloy Nanosheets with Composition-Tunable Electronic Properties
Xidong Duan,Chen Wang,Zheng Fan,Guolin Hao,Liangzhi Kou,Udayabagya Halim,Honglai Li,Xueping Wu,Yicheng Wang,Jian-Hui Jiang,Anlian Pan,Yu Huang,Ruqin Yu,Xiangfeng Duan +13 more
TL;DR: A systematic control of the electronic properties of 2D-TMDs is demonstrated by creating mixed alloys of the intrinsically p-type WSe2 and intrinsically n-type WS2 with variable alloy compositions and it is shown that a series of WS2xSe2-2x alloy nanosheets can be synthesized with fully tunable chemical compositions and optical properties.
Journal ArticleDOI
p-type doping of MoS2 thin films using Nb
Masihhur R. Laskar,Digbijoy N. Nath,Lu Ma,Edwin W. Lee,Choong Hee Lee,Thomas F. Kent,Zihao Yang,Rohan Mishra,Manuel A. Roldan,Juan Carlos Idrobo,Sokrates T. Pantelides,Stephen J. Pennycook,Roberto C. Myers,Yiying Wu,Siddharth Rajan +14 more
TL;DR: In this paper, the first demonstration of substitutional p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited MoS2 was reported, where Niobium was found to act as an efficient acceptor up to relatively high density in MoS 2 films.
References
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