Atomically thin MoS2: a new direct-gap semiconductor
TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.Abstract:
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk materialread more
Citations
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Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors
Yao Guo,Xianlong Wei,Jiapei Shu,Bo Liu,Jianbo Yin,Changrong Guan,Yuxiang Han,Song Gao,Qing Chen +8 more
TL;DR: In this paper, the impact of the trapped charges on the carrier transport of MoS2-based metal-oxide-semiconductor FETs is evaluated. And the trapped charge density and time constant at different temperatures are extracted.
Journal ArticleDOI
Emergent phenomena and proximity effects in two-dimensional magnets and heterostructures.
TL;DR: This Review summarizes recent progress in exploring the intrinsic magnetism of atomically thin van der Waals materials, manipulation of their magnetism by tuning the interlayer coupling, and device structures for spin- and valleytronic applications.
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Evidence for Fast Interlayer Energy Transfer in MoSe2/WS2 Heterostructures.
Daichi Kozawa,Daichi Kozawa,Daichi Kozawa,Alexandra Carvalho,Ivan Verzhbitskiy,Francesco Giustiniano,Yuhei Miyauchi,Yuhei Miyauchi,Shinichiro Mouri,A. H. Castro Neto,Kazunari Matsuda,Goki Eda +11 more
TL;DR: An experimental observation of fast interlayer energy transfer (ET) in MoSe2/WS2 heterostructures using photoluminescence excitation (PLE) spectroscopy is reported and the temperature dependence of the transfer rates suggests that the ET is Förster-type involving excitons in the WS2 layer resonantly exciting higher-order excites in the MoSe 2 layer.
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Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)
Kunttal Keyshar,Yongji Gong,Gonglan Ye,Gustavo Brunetto,Wu Zhou,Daniel P. Cole,Ken Hackenberg,Yongmin He,Leonardo D. Machado,Mohamad Kabbani,Amelia H. C. Hart,Bo Li,Douglas S. Galvao,Antony George,Robert Vajtai,Chandra Sekhar Tiwary,Pulickel M. Ajayan +16 more
TL;DR: Initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.
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High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts
TL;DR: This work investigates the field-effect transistor behavior of MoS2 with ferromagnetic contacts to explore its potential for spintronics and reveals that such integration of ferrom magnetic tunnel contacts opens up the possibilities for MoS1-based spintronic devices.
References
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