Atomically thin MoS2: a new direct-gap semiconductor
TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.Abstract:
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk materialread more
Citations
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Catalysis of Carbon Dioxide Photoreduction on Nanosheets: Fundamentals and Challenges.
Zhenyu Sun,Neetu Talreja,Hengcong Tao,John Texter,Martin Muhler,Jennifer Strunk,Jian-Feng Chen +6 more
TL;DR: An overarching aim of this Review is to summarize the literature on the photocatalytic conversion of CO2 by various 2D materials in the liquid phase, with special attention given to the development of novel 2D photocatalyst materials to provide a basis for improved materials.
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Gate-induced superconductivity in atomically thin MoS2 crystals
TL;DR: A clear transition for all thicknesses down to the ultimate atomic limit is observed, providing the first demonstration of gate-induced superconductivity in atomically thin exfoliated crystals, and the superconducting properties exhibit a pronounced reduction in TC and BC when going from bilayers to monolayers.
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Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers.
TL;DR: It is shown how to realize quantum gates on the spin qubit controlled by the valley bit, making an interplay between the spin and valley as information carriers possible for potential valley-spintronic applications.
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Tuning two-dimensional nanomaterials by intercalation: materials, properties and applications
TL;DR: The recent progress on host 2D materials, various intercalation species, andintercalation methods, as well as tunable properties and potential applications enabled by intercalated materials are comprehensively reviewed.
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Response to NO2 and other gases of resistive chemically exfoliated MoS2-based gas sensors
M. Donarelli,S. Prezioso,Francesco Perrozzi,Federico Bisti,Michele Nardone,L. Giancaterini,Carlo Cantalini,Luca Ottaviano +7 more
TL;DR: In this paper, the electrical response to NO 2 and other gases of resistive type gas sensors based on liquid chemically exfoliated (in N-methyl pyrrolidone, NMP) MoS 2 flakes annealed in air either at 150°C or at 250°C.
References
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Emerging Photoluminescence in Monolayer MoS2
Andrea Splendiani,Liang Sun,Yuanbo Zhang,Tianshu Li,Jonghwan Kim,Chi-Yung Chim,Giulia Galli,Feng Wang,Feng Wang +8 more
TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.