Atomically thin MoS2: a new direct-gap semiconductor
TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.Abstract:
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk materialread more
Citations
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Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes
Rui Cheng,Dehui Li,Hailong Zhou,Chen Wang,Anxiang Yin,Shan Jiang,Yuan Liu,Yu Chen,Yu Huang,Xiangfeng Duan +9 more
TL;DR: In this article, an atomically thin and sharp heterojunction p-n diode can be created by vertically stacking p-type monolayer tungsten diselenide (WSe2) and n-type few-layer molybdenum disulfide (MoS2).
Journal ArticleDOI
High Electrical Conductivity in Ni3(2,3,6,7,10,11-hexaiminotriphenylene)2, a Semiconducting Metal–Organic Graphene Analogue
Dennis Sheberla,Lei Sun,Martin A. Blood-Forsythe,Süleyman Er,Casey R. Wade,Carl K. Brozek,Alán Aspuru-Guzik,Mircea Dincă +7 more
TL;DR: Two-probe and van der Pauw electrical measurements reveal bulk and surface conductivity values of 2 and 40 S·cm(-1), respectively, both records for MOFs and among the best for any coordination polymer.
Journal ArticleDOI
Coherent Atomic and Electronic Heterostructures of Single-Layer MoS2
Goki Eda,Takeshi Fujita,Takeshi Fujita,Hisato Yamaguchi,Damien Voiry,Mingwei Chen,Manish Chhowalla +6 more
TL;DR: High resolution scanning transmission electron microscope (STEM) imaging reveals the coexistence of metallic and semiconducting phases within the chemically homogeneous two-dimensional MoS(2) nanosheets, suggesting potential for exploiting molecular scale electronic device designs in atomically thin 2D layers.
Journal ArticleDOI
Graphene and two-dimensional materials for silicon technology.
Deji Akinwande,Cedric Huyghebaert,Ching-Hua Wang,Martha I. Serna,Stijn Goossens,Lain-Jong Li,H.-S. Philip Wong,H.-S. Philip Wong,Frank H. L. Koppens,Frank H. L. Koppens +9 more
TL;DR: The opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems are reviewed, and the prospects for computational and non-computational applications are considered.
Journal ArticleDOI
Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers.
TL;DR: This work discovers that mechanical deformations provide a route to switching thermodynamic stability between a semiconducting and a metallic crystal structure in these monolayer materials and finds that MoTe2 is an excellent candidate phase change material.
References
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Journal ArticleDOI
Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene
TL;DR: Graphene is established as the strongest material ever measured, and atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
Journal ArticleDOI
Two-dimensional atomic crystals
Kostya S. Novoselov,Da Jiang,Fred Schedin,Timothy J. Booth,V. V. Khotkevich,Sergey V. Morozov,Andre K. Geim +6 more
TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI
Emerging Photoluminescence in Monolayer MoS2
Andrea Splendiani,Liang Sun,Yuanbo Zhang,Tianshu Li,Jonghwan Kim,Chi-Yung Chim,Giulia Galli,Feng Wang,Feng Wang +8 more
TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
Journal ArticleDOI
Anomalous lattice vibrations of single- and few-layer MoS2.
TL;DR: This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime by characterized by Raman spectroscopy.
Journal ArticleDOI
The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties
J.A. Wilson,A.D. Yoffe +1 more
TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.