Atomically thin MoS2: a new direct-gap semiconductor
TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.Abstract:
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk materialread more
Citations
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Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
Wenjuan Zhu,Tony Low,Yi-Hsien Lee,Han Wang,Damon B. Farmer,Jing Kong,Fengnian Xia,Phaedon Avouris +7 more
TL;DR: The electronic transport and device properties of monolayer molybdenum disulphide grown by chemical vapour deposition are reported and it is revealed that these devices have the potential to suppress short channel effects and have high critical breakdown electric field.
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Solution-Processed Two-Dimensional Metal Dichalcogenide-Based Nanomaterials for Energy Storage and Conversion.
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References
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