Atomically thin MoS2: a new direct-gap semiconductor
TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.Abstract:
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk materialread more
Citations
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Strong Exciton–Plasmon Coupling in MoS 2 Coupled with Plasmonic Lattice
Wenjing Liu,Bumsu Lee,Carl H. Naylor,Ho Seok Ee,Joohee Park,A. T. Charlie Johnson,Ritesh Agarwal +6 more
TL;DR: In this article, strong exciton-plasmonon coupling was demonstrated in a nanodisk array integrated with monolayer MoS2 via angle-resolved reflectance microscopy spectra of the coupled system.
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Outstanding mechanical properties of monolayer MoS2 and its application in elastic energy storage
Qing Peng,Suvranu De +1 more
TL;DR: In this paper, the structural and mechanical properties of graphene-like honeycomb monolayer structures of MoS2 (g-MoS2) under various large strains were investigated using density functional theory.
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Tuning Magnetism and Electronic Phase Transitions by Strain and Electric Field in Zigzag MoS2 Nanoribbons.
TL;DR: It is shown by first-principles calculations that the magnetic and electronic properties of zigzag MoS2NRs exhibit sensitive response to applied strain and electric field, suggesting a robust and efficient approach to modulating the properties of MoS 2NRs by a combination of strain engineering andElectric field tuning.
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Intervalley scattering by acoustic phonons in two-dimensional MoS2 revealed by double-resonance Raman spectroscopy.
Bruno R. Carvalho,Yuanxi Wang,Sandro Mignuzzi,Debdulal Roy,Debdulal Roy,Mauricio Terrones,Cristiano Fantini,Vincent H. Crespi,Leandro M. Malard,Marcos A. Pimenta +9 more
TL;DR: A multiple energy excitation Raman study in conjunction with density functional theory calculations that unveil the double-resonance Raman scattering process in monolayer and bulk MoS2 and highlights the underlying physics of intervalley scattering of electrons by acoustic phonons, which is essential for valley depolarization in MoS 2.
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Small-signal amplifier based on single-layer MoS2
TL;DR: In this paper, an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene, is demonstrated for the frequencies of input signal up to 2 kHz.
References
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TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
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Emerging Photoluminescence in Monolayer MoS2
Andrea Splendiani,Liang Sun,Yuanbo Zhang,Tianshu Li,Jonghwan Kim,Chi-Yung Chim,Giulia Galli,Feng Wang,Feng Wang +8 more
TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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Anomalous lattice vibrations of single- and few-layer MoS2.
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TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.