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Atomically thin MoS2: a new direct-gap semiconductor

TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
Abstract
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk material

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Chemical Vapor Deposition of Thin Crystals of Layered Semiconductor SnS2 for Fast Photodetection Application

TL;DR: A novel approach to the controlled synthesis of thin crystal arrays of SnS(2) at predefined locations on chip by chemical vapor deposition with seed engineering is reported, which opens a pathway for the large-scale production of layered 2D semiconductor devices, important for applications in integrated nanoelectronic/photonic systems.
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Q-switched fiber laser based on transition metal dichalcogenides MoS 2 , MoSe 2 , WS 2 , and WSe 2

TL;DR: It is found that MoSe(2) exhibits highest modulation depth with similar preparation process among four saturable absorbers, which demonstrates the feasibility of TMDs to Q-switch fiber laser effectively.
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Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

TL;DR: This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics by showing that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime.
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Photocarrier relaxation pathway in two-dimensional semiconducting transition metal dichalcogenides

TL;DR: The experimental and simulation results reveal that photoexcited electron-hole pairs in the nesting region spontaneously separate in k-space, relaxing towards immediate band extrema with opposite momentum, implying that the loss of photocarriers due to direct exciton recombination is temporarily suppressed for excitation in resonance with band nesting.
References
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Journal ArticleDOI

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

TL;DR: Graphene is established as the strongest material ever measured, and atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
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Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
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Emerging Photoluminescence in Monolayer MoS2

TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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Anomalous lattice vibrations of single- and few-layer MoS2.

TL;DR: This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime by characterized by Raman spectroscopy.
Journal ArticleDOI

The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

J.A. Wilson, +1 more
- 01 May 1969 - 
TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.
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