Atomically thin MoS2: a new direct-gap semiconductor
TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.Abstract:
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk materialread more
Citations
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Journal ArticleDOI
Photosensor Device Based on Few-Layered WS2 Films
Nestor Perea-Lopez,Ana Laura Elías,Ayse Berkdemir,A. Castro-Beltrán,Humberto R. Gutierrez,Simin Feng,Ruitao Lv,Takuya Hayashi,Florentino López-Urías,Sujoy Ghosh,Baleeswaraiah Muchharla,Saikat Talapatra,Humberto Terrones,Mauricio Terrones,Mauricio Terrones +14 more
TL;DR: In this article, a few-layered WS2 is synthesized by chemical vapor deposition on quartz, which is successfully used as light sensors and the results indicate that the electrical response strongly depends on the photon energy from the excitation lasers.
Journal ArticleDOI
Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization
Wanglin Lu,Haiyan Nan,Jinhua Hong,Yuming Chen,Chen Zhu,Zheng Liang,Xiangyang Ma,Zhenhua Ni,Chuanhong Jin,Ze Zhang +9 more
TL;DR: In this paper, the thickness of monolayer phosphorene is determined by optical contrast spectra combined with atomic force microscopy (AFM), and Raman spectroscopy is used to characterize pristine and plasma-treated samples.
Journal ArticleDOI
Coulomb engineering of the bandgap and excitons in two-dimensional materials
Archana Raja,Andrey Chaves,Andrey Chaves,Jaeeun Yu,Ghidewon Arefe,Heather M. Hill,Heather M. Hill,Albert F. Rigosi,Albert F. Rigosi,Timothy C. Berkelbach,Philipp Nagler,Christian Schüller,Tobias Korn,Colin Nuckolls,James Hone,Louis E. Brus,Tony F. Heinz,Tony F. Heinz,Tony F. Heinz,David R. Reichman,Alexey Chernikov,Alexey Chernikov +21 more
TL;DR: By engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS2 and WSe2 by hundreds of meV, as an initial step towards the creation of diverse lateral junctions with nanoscale resolution.
Journal ArticleDOI
Robust intrinsic ferromagnetism and half semiconductivity in stable two-dimensional single-layer chromium trihalides
TL;DR: In this article, single-layer chromium trihalides (SLCTs) were shown to constitute a series of stable 2D intrinsic ferromagnetic (FM) semiconductors with indirect gaps and their valence and conduction bands are fully spin-polarized in the same spin direction.
Journal ArticleDOI
Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments
Dung-Sheng Tsai,Keng-Ku Liu,Der Hsien Lien,Meng-Lin Tsai,Chen Fang Kang,Chin An Lin,Lain-Jong Li,Lain-Jong Li,Jr-Hau He +8 more
TL;DR: Few-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain, fast photoresponse, and high thermal stability.
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