scispace - formally typeset
Open AccessJournal ArticleDOI

Atomically thin MoS2: a new direct-gap semiconductor

TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
Abstract
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk material

read more

Citations
More filters
Journal ArticleDOI

Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures

TL;DR: This review of the challenges in the CVD growth of 2D materials highlights recent advances in the controlled growth of single crystal 2Dmaterials, with an emphasis on semiconducting transition metal dichalcogenides.
Journal ArticleDOI

Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides

TL;DR: In this article, a comprehensive first-principles study of the electronic structure of 51 semiconducting monolayer transition-metal dichalcogenides and -oxides in the 2H and 1T hexagonal phases is presented.
Journal ArticleDOI

van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates

TL;DR: This simple chemical vapor deposition method provides a unique approach for the synthesis of graphene heterostructures and surface functionalization of graphene and possesses great potential toward the development of new optical and electronic devices as well as a wide variety of newly synthesizable compounds for catalysts.
Journal ArticleDOI

Large-area synthesis of highly crystalline WSe2 monolayers and device applications

TL;DR: The introduction of hydrogen in the reaction chamber helps to activate the selenization of WO3, where large-size WSe2 monolayer flakes or thin films can be successfully grown and the resistor-loaded inverter based on a WSe 2 film, with a gain of ∼13, further demonstrates its applicability for logic-circuit integrations.
Journal ArticleDOI

Probing excitonic dark states in single-layer tungsten disulphide

TL;DR: Experimental evidence of a series of excitonic dark states in single-layer WS2 using two-photon excitation spectroscopy is reported, and it is proved that the excitons are of Wannier type, meaning that each exciton wavefunction extends over multiple unit cells, but with extraordinarily large binding energy.
References
More filters
Journal ArticleDOI

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

TL;DR: Graphene is established as the strongest material ever measured, and atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
Journal ArticleDOI

Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI

Emerging Photoluminescence in Monolayer MoS2

TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
Journal ArticleDOI

Anomalous lattice vibrations of single- and few-layer MoS2.

TL;DR: This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime by characterized by Raman spectroscopy.
Journal ArticleDOI

The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

J.A. Wilson, +1 more
- 01 May 1969 - 
TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.
Related Papers (5)