Atomically thin MoS2: a new direct-gap semiconductor
TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.Abstract:
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk materialread more
Citations
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Transient absorption microscopy of monolayer and bulk WSe2
TL;DR: An experimental investigation on the exciton dynamics of monolayer and bulk WSe2 samples, both of which are studied by femtosecond transient absorption microscopy, resolves the differential reflection signal in both time and space and deduces other parameters characterizing theexciton dynamics such as the diffusion length, the mobility, the mean free path, and themean free length.
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Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening
Zhihao Yu,Zhun-Yong Ong,Yiming Pan,Yang Cui,Run Xin,Yi Shi,Baigeng Wang,Yun Wu,Tangsheng Chen,Yong-Wei Zhang,Gang Zhang,Xinran Wang +11 more
TL;DR: By combining a high-κ dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened as discussed by the authors, leading to an unprecedented room-temperature mobility of ≈150 cm(2) V(-1) s(-1).
Journal ArticleDOI
Excited Excitonic States in 1L, 2L, 3L, and Bulk WSe2 Observed by Resonant Raman Spectroscopy
Elena del Corro,Humberto Terrones,Ana Laura Elías,Cristiano Fantini,Simin Feng,Minh An T. Nguyen,Thomas E. Mallouk,Mauricio Terrones,Marcos A. Pimenta +8 more
TL;DR: A RRS study of samples of WSe2 with one, two, and three layers, as well as bulk 2H-WSe2, using up to 20 different laser lines covering the visible range shows that Raman enhancement is much stronger for the excited A' and B' states.
Journal ArticleDOI
Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films
Han Liu,Mengwei Si,Sina Najmaei,Adam T. Neal,Yuchen Du,Pulickel M. Ajayan,Jun Lou,Peide D. Ye +7 more
TL;DR: This Letter synthesizes monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based on dual-gatedMoS2 field-effect transistors.
Journal ArticleDOI
Large-area single-layer MoSe2 and its van der Waals heterostructures.
Gi Woong Shim,Kwonjae Yoo,Seung-Bum Seo,Jongwoo Shin,Dae Yool Jung,Il-Suk Kang,Chi Won Ahn,Byung Jin Cho,Sung-Yool Choi +8 more
TL;DR: This work demonstrates the synthesis of large-area MoSe2 with high quality and uniformity by selenization of MoO3 via chemical vapor deposition on arbitrary substrates such as SiO2 and sapphire and demonstrates the development of highly controlled heterostructures of two-dimensional materials.
References
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