Journal ArticleDOI
Fabrication and Analysis of Epitaxially Grown Ge $_{1-x}$ Sn $_x$ Microdisk Resonator With 20-nm Free-Spectral Range
Seongjae Cho,R. Chen,Sukmo Koo,Gary Shambat,Hai Lin,Namkyoo Park,Jelena Vuckovic,Theodore I. Kamins,Byung-Gook Park,James S. Harris +9 more
TLDR
In this article, a whispering gallery mode (WGM) microdisk resonator based on Ge1-xSnx grown by molecular beam epitaxy (MBE) was fabricated and characterized.Abstract:
In this work, a whispering gallery mode (WGM) microdisk resonator based on Ge1-xSnx grown by molecular beam epitaxy (MBE) was fabricated and characterized. Various process conditions and different Sn contents (4% and 1%) were explored to confirm the feasibility of Ge1-xSnx for microcavity device operation. Optical modes with wavelengths in the infrared (IR) range beyond 1550 nm were successfully confined in the devices fabricated with different diameters, and free-spectral ranges (FSRs) near 20 nm were obtained.read more
Citations
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Journal ArticleDOI
Si–Ge–Sn alloys: From growth to applications
Stephan Wirths,Dan Buca,S. Mantl +2 more
TL;DR: In this paper, the transition from an indirect to a fundamental direct bandgap material will be discussed, and the most commonly used approaches, i.e., molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydride and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3.
Journal ArticleDOI
Group IV direct band gap photonics: Methods, Challenges and Opportunities
R. Geiger,T. Zabel,Hans Sigg +2 more
TL;DR: The concept of direct band gap group IV materials offers a paradigm change for Si-photonics concerning the monolithic implementation of light emitters: the idea is to integrate fully compatible group IV material with equally favorable optical properties as the chemically incompatible group III-V-based systems.
Journal ArticleDOI
Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge(Sn) materials for micro- and nanophotonics.
Robert Chen,Suyog Gupta,Yi-Chiau Huang,Yijie Huo,Charles W. Rudy,Errol Antonio C. Sanchez,Yihwan Kim,Theodore I. Kamins,Krishna C. Saraswat,James S. Harris +9 more
TL;DR: A pseudomorphic Ge/Ge0.92Sn0.08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn-based laser on silicon is theoretically studied and experimentally demonstrated.
Journal ArticleDOI
Germanium based photonic components toward a full silicon/germanium photonic platform
Vincent Reboud,Alban Gassenq,J.M. Hartmann,Julie Widiez,Léopold Virot,J. Aubin,Kevin Guilloy,Samuel Tardif,Jean-Marc Fedeli,Nicolas Pauc,Alexei Chelnokov,Vincent Calvo +11 more
TL;DR: In this paper, the authors show that optical germanium-on-insulator (GeOI) substrates fabricated by the Smart Cut™ technology is a key feature for future Si-complementary metal oxide Semiconductor (CMOS) compatible laser demonstration.
Journal ArticleDOI
Room-temperature electroluminescence from germanium in an Al 0.3 Ga 0.7 As/Ge heterojunction light-emitting diode by Γ-valley transport
Seongjae Cho,Byung-Gook Park,Changjae Yang,Stanley Cheung,Euijoon Yoon,Theodore I. Kamins,S. J. Ben Yoo,James S. Harris +7 more
TL;DR: Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the Γ-valley of germanium.
References
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Journal ArticleDOI
Direct band Ge photoluminescence near 1.6 μm coupled to Ge-on-Si microdisk resonators
TL;DR: In this article, the authors fabricate and optically characterize germanium microdisks formed out of epitaxial Germanium grown on silicon and demonstrate that significantly higher doping levels are critical in order to achieve lasing at reasonable pump conditions.
Journal ArticleDOI
Optical and electronic properties of SiGeC alloys grown on Si substrates
James Kolodzey,Paul R. Berger,B. A. Orner,D. Hits,F. Chen,Al-Sameen T. Khan,Xiaoping Shao,M. M. Waite,S. Ismat Shah,Charles P. Swann,Karl Unruh +10 more
TL;DR: In this article, the authors showed that SiGeC alloys are promising materials for Si-based heterostructure devices and showed significant photoluminescence at low temperatures.
Journal ArticleDOI
Coupled fiber taper extraction of 153 μm photoluminescence from erbium doped silicon nitride photonic crystal cavities
TL;DR: By varying the fiber taper offset from the cavity, a broad tuning range of coupling strength and collection efficiency is obtained and this material system combined with fiber tapers collection is promising for building on-chip optical amplifiers.
Journal ArticleDOI
High-Q whispering gallery traveling wave resonators for oscillator frequency stabilization
TL;DR: Q-factor measurements of a WGTW sapphire resonator are presented, along with a derivation of critical parameters to maximize the frequency discrimination, and new measurements of noise in ferrite circulators and isolators have been made.
Journal ArticleDOI
Coupled fiber taper extraction of 1.53 um photoluminescence from erbium doped silicon nitride photonic crystal cavities
TL;DR: In this paper, optical fiber tapers are used to collect photoluminescence emission at 1.5 um from photonic crystal cavities fabricated in erbium doped silicon nitride on silicon.