Journal ArticleDOI
GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm
Herwig Hahn,Fouad Benkhelifa,Oliver Ambacher,A. Alam,Michael Heuken,Hady Yacoub,A. Noculak,Holger Kalisch,Andrei Vescan +8 more
TLDR
In this paper, an enhancement mode metal insulator semiconductor heterostructure field effect transistor on Si substrate with record on-current of 1.35 A/mm and threshold voltage of +0.82 V is demonstrated.Abstract:
GaN-on-Si transistors are regarded as a candidate for future power-switching applications. Beside the necessity to achieve enhancement mode behavior, on-resistance and maximum gate voltage are still limited for GaN-based transistors on Si substrate. Here, an enhancement mode metal insulator semiconductor heterostructure field effect transistor on Si substrate with record on-current of 1.35 A/mm and threshold voltage of +0.82 V is demonstrated. The corresponding gate current is still well below 1 mA/mm at 6.5 V gate voltage. By comparison of measured and simulated CV curves, the density of interface states introduced by the insulator is shown to be quasi-independent on etch damage and/or barrier material.read more
Citations
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Journal ArticleDOI
The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices
Hady Yacoub,Dirk Fahle,Matthias Finken,Herwig Hahn,Christian Blumberg,Werner Prost,Holger Kalisch,Michael Heuken,Andrei Vescan +8 more
TL;DR: In this paper, the effect of the thickness of an aluminum nitride buffer layer on the vertical breakdown voltage, measured relative to a grounded silicon substrate, has been investigated, and it has been found that the breakdown in the positive bias voltage regime is initiated by carrier injection, for which the carriers originate from an inversion channel formed between the epitaxial layers and the p-silicon substrate.
Journal ArticleDOI
Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations
M. Ťapajna,M. Jurkovič,L. Valik,Š. Haščík,Dagmar Gregušová,Frank Brunner,E.-M. Cho,Tamotsu Hashizume,Jan Kuzmik +8 more
TL;DR: In this article, the authors analyzed the capacitance distributions of Al2O3/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap using comprehensive capacitance measurements and simulations.
Journal ArticleDOI
Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With $10^{-13}$ A/mm Leakage Current and $10^{12}$ ON/OFF Current Ratio
Zhe Xu,Jinyan Wang,Yong Cai,Jingqian Liu,Chunyan Jin,Zhenchuan Yang,Maojun Wang,Min Yu,Xie Bing,Wengang Wu,Xiaohua Ma,Jincheng Zhang,Yue Hao +12 more
TL;DR: In this paper, postgate annealing (PGA) was performed on enhancement mode AlGaN/GaN MOSFET fabricated using a self-terminating gate recess etching technique.
Journal ArticleDOI
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
Herwig Hahn,Fouad Benkhelifa,Oliver Ambacher,Frank Brunner,A. Noculak,Holger Kalisch,Andrei Vescan +6 more
TL;DR: In this paper, a comprehensive study of four different approaches to shift the threshold voltage of a gallium nitride (GaN)-based heterostructure field effect transistors (HFETs) well into the positive range is presented.
Journal ArticleDOI
Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors
Herwig Hahn,B. Reuters,Sascha Geipel,Meike Schauerte,Fouad Benkhelifa,Oliver Ambacher,Holger Kalisch,Andrei Vescan +7 more
TL;DR: In this paper, a 2-D hole gas (2DHG) was employed on top of the 2DEG to suppress the electric field peak in GaN-based heterostructure FETs.
References
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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TL;DR: In this paper, it was shown that the macroscopic nonlinear pyroelectric polarization of wurtzite AlInN/GaN, InxGa1-xN and AlxIn1xN ternary compounds (large spontaneous polarization and piezoelectric coupling) dramatically affects the optical and electrical properties of multilayered Al(In)GaN/GAN hetero-, nanostructures and devices, due to the huge built-in electrostatic fields and bound interface charges caused by gradients in polarization at surfaces and heter
Journal ArticleDOI
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +8 more
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
Journal ArticleDOI
Band offsets of high K gate oxides on III-V semiconductors
John Robertson,B. Falabretti +1 more
TL;DR: In this article, the band offsets of various gate dielectrics including HfO2, Al2O3, Gd2O 3, Si3N4, and SiO2 on III-V semiconductors such as GaAs, InAs, GaSb, and GaN have been calculated using the method of charge neutrality levels.
Journal ArticleDOI
Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
TL;DR: In this paper, the effects of electronic states at free surfaces of AlGaN/GaN heterostructure field effect transistors (HFETs) on the inner current transport at the heterointerfaces were investigated.