Journal ArticleDOI
SiC and GaN devices – wide bandgap is not all the same
Nando Kaminski,Oliver Hilt +1 more
TLDR
In this article, it is shown that material cost and quality will finally decide the commercial success of wide bandgap devices, whereas GaN on silicon would offer an unrivalled cost advantage.Abstract:
Silicon carbide (SiC)-diodes have been commercially available since 2001 and various SiC-switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power electronics and the first low-voltage devices are already on the market. Currently, it seems that GaN-transistors are ideal for high frequency ICs up to 1kV (maybe 2kV) and maximum a few 10A. SiC transistors are better suited for discrete devices or modules blocking 1kV and above and virtually no limit in the current but in that range they will face strong competition from the silicon insulated gate bipolar transistors (IGBTs). SiC and GaN Schottky-diodes would offer a similar performance, hence here it becomes apparent that material cost and quality will finally decide the commercial success of wide bandgap devices. Bulk GaN is still prohibitively expensive, whereas GaN on silicon would offer an unrivalled cost advantage. Devices made from the latter could be even cheaper than silicon devices. However, packaging is already a limiting factor for silicon devices even more so in exploiting the advantage of wide bandgap materials with respect to switching speed and high temperature operation. After all, reliability is a must for any device no matter which material it is made of.read more
Citations
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Journal ArticleDOI
Diamond power devices: state of the art, modelling, figures of merit and future perspective
Nazareno Donato,Nicolas Rouger,Julien Pernot,Julien Pernot,Julien Pernot,Giorgia Longobardi,Florin Udrea +6 more
Journal ArticleDOI
Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects
TL;DR: This work focuses on an in-deep review of the state of the art concerning the power module, identifying the electrical requirements for the modules and the power conversion topologies that will best suit future drives.
Journal ArticleDOI
Next generation electric drives for HEV/EV propulsion systems: Technology, trends and challenges
TL;DR: In this paper, a comprehensive review of the current technologies, future trends and enabling technologies that will make possible next generation hybrid and full electric vehicle (HEV/EV) drive systems is presented.
Journal ArticleDOI
Multidimensional device architectures for efficient power electronics
TL;DR: A review of multidimensional device architectures for power electronics can be found in this article , where the performance limits, scaling and material figure of merits of the different architectures are discussed.
Journal ArticleDOI
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs
Matteo Borga,Matteo Meneghini,Isabella Rossetto,Steve Stoffels,Niels Posthuma,Marleen Van Hove,Denis Marcon,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni +9 more
TL;DR: In this paper, the authors investigated the time-dependent vertical breakdown of GaN-on-Si power transistors based on electrical characterization, dc stress tests and electroluminescence measurements.
References
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Proceedings ArticleDOI
High voltage thin layer devices (RESURF devices)
J.A. Appels,H.M.J. Vaes +1 more
TL;DR: The RESURF (Reduced SURface Field) as discussed by the authors is a diode-based diode structure for high voltage devices with very thin epitaxial or implanted layers, where crucial changes in the electric field distribution occur at or at least near the surface.
Journal ArticleDOI
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.
Journal ArticleDOI
Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors
Jungwoo Joh,J.A. del Alamo +1 more
TL;DR: In this article, a critical drain-to-gate voltage beyond which GaN high-electron mobility transistors start to degrade in electrical-stress experiments was found, which is consistent with a degradation mechanism based on crystallographic defect formation due to the inverse piezoelectric effect.
Journal ArticleDOI
Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
Yu Saitoh,Kazuhide Sumiyoshi,Masaya Okada,Taku Horii,Tomihito Miyazaki,Hiromu Shiomi,Masaki Ueno,Koji Katayama,Makoto Kiyama,Takao Nakamura +9 more
TL;DR: In this article, a high quality n-GaN drift-layer with an electron mobility of 930 cm2 V-1 s-1 was obtained by optimizing the growth conditions by reducing the intensity of yellow luminescence using conventional photoluminescence measurements.
Proceedings ArticleDOI
High performance SiC trench devices with ultra-low ron
Takashi Nakamura,Yuki Nakano,Masatoshi Aketa,Ryota Nakamura,Shuhei Mitani,H. Sakairi,Y. Yokotsuji +6 more
TL;DR: In this article, the authors have developed SiC trench structure Schottky diodes and SiC double-trench MOSFETs to improve device performance by reducing the electric field through the introduction of the aforementioned trench structures.
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