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Feng Zhang

Researcher at Fudan University

Publications -  2715
Citations -  225233

Feng Zhang is an academic researcher from Fudan University. The author has contributed to research in topics: Medicine & Biology. The author has an hindex of 172, co-authored 1278 publications receiving 181865 citations. Previous affiliations of Feng Zhang include Cincinnati Children's Hospital Medical Center & Nanjing Medical University.

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mRNA cancer vaccines: Advances, trends and challenges

TL;DR: In 2019, the U.S. Food and Drug Administration (FDA) approved the first mRNA-based coronavirus disease 2019 (COVID-19) vaccine produced by Pfizer and BioNTech, which generated enthusiasm for mRNA vaccine research and development as discussed by the authors .
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Rapamycin promotes the expansion of CD4(+) Foxp3(+) regulatory T cells after liver transplantation.

TL;DR: Rapamycin can significantly enhance the percentages of CD4(+)Foxp3(+) Tregs in the thymus and periphery, indicating that rapamycin favors T Regs expansion and may suppress other CD4 (+) T cells.
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Tailoring Local Electrolyte Solvation Structure via a Mesoporous Molecular Sieve for Dendrite‐Free Zinc Batteries

TL;DR: In this article , a molecular sieve with ordered mesoporous channels is constructed to tailor the local electrolyte solvation structure on the zinc surface, which induces the formation of a locally concentrated electrolyte and affords a lower Zn2+ de−solvation energy in Mobil composition of matter number 41 (MCM41).
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Digital quantum simulation of Floquet symmetry-protected topological phases

TL;DR: In this paper , a symmetry-protected topological time crystal was observed with an array of programmable superconducting qubits and robust long-lived temporal correlations and sub-harmonic temporal response for the edge spins.
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Switching Transient Analysis for Normally- off GaN Transistor With p-GaN Gate in a Phase-Leg Circuit

TL;DR: In this paper, a hybrid physical-behavior modeling method is proposed to evaluate the switching transient performance of a GaN transistor with a p-GaN gate in high-electron-mobility transistor (HEMT) devices.