Heritage Institute of Technology

About: Heritage Institute of Technology is a based out in . It is known for research contribution in the topics: Support vector machine & Transconductance. The organization has 581 authors who have published 1045 publications receiving 8345 citations.

Geometric nonlinear free vibration of axially functionally graded non-uniform beams supported on elastic foundation

Abstract: Abstract In the present study non-linear free vibration analysis is performed on a tapered Axially Functionally Graded (AFG) beam resting on an elastic foundation with different boundary conditions. Firstly the static problem is carried out through an iterative scheme using a relaxation parameter and later on the subsequent dynamic problem is solved as a standard eigen value problem. Minimum potential energy principle is used for the formulation of the static problem whereas for the dynamic problem Hamilton’s principle is utilized. The free vibrational frequencies are tabulated for different taper profile, taper parameter and foundation stiffness. The dynamic behaviour of the system is presented in the form of backbone curves in dimensionless frequency-amplitude plane.

On the performance of Indian technical institutions: a combined SOWIA-MOORA approach

Abstract: Indian technical education system is facing challenges due to liberalization and globalization of Indian economy. Many foreign multinationals are focusing on India for employable talents. Many technical institutions with state of the art technologies and techniques are being set up by foreign collaboration, national and private initiatives. Therefore it is a requirement of all stakeholders to do performance evaluation and ranking these institutions. For this objective we propose a multiple criteria analysis based performance evaluation model consisting of subjective and objective weight integrated approach (SOWIA) and multiple objective optimization on the basis of ratio analysis (MOORA) method. Seven Indian Institute of Technology (IITs) have been chosen for study using the proposed model.

Range aggregate maximal points in the plane

Abstract: In this work, we study the problem of reporting and counting maximal points in a query rectangle for a set of n integer points that lie on an n×n grid A point is said to be maximal inside a query rectangle if it is not dominated by any other point inside the query rectangle Our model of computation is unit-cost RAM model with word size of O(logn) bits For the reporting version of the problem, we present a data structure of size $O(n\frac{\log n}{\log\log n})$ words and support querying in $O(\frac{\log n}{\log\log n}+k)$ time where k is the size of the output For the counting version, we present a data structure of size $O(n\frac{\log^{2} n}{\log\log n})$ words which supports querying in $O(\frac{\log^{\frac{3}{2}}n} {\log\log n})$ Both the data structures are static in nature The reporting version of the problem has been studied in [1] and [5] To the best of our knowledge, this is the first sub-logarithmic result for the reporting version and the first work for the counting version of the problem

Electrical and optical properties of as‐deposited V2O5 –TeO2 amorphous films and their annealing effect

Abstract: DC electrical conductivity of vanadium-tellurite films both as-deposited by vacuum deposition and annealed at 773 K for 3 h after deposition are investigated in the temperature range of 323-473 K. All as-deposited films (250-350 nm thickness) show an amorphous structure; the annealed films show some crystalline peaks of TeO 2 . The conductivity of the as-deposited films at 373 K varies from 1.07 x 10 -7 to to 3.73 x 10 -15 Scm -1 . With annealing the conductivity increases by a factor of 10 to 10 3 due to the presence of some nanocrystals of TeO 2 and also increases with an increase of the V 2 O 5 content. The temperature dependence of the conductivity of both as-deposited and annealed films obeys a non-adiabatic small polaron hopping conduction mechanism. Seebeck coefficient measurements indicate all the films to be n-type semiconductors. From absorption edge analysis it is revealed that the optical band gap energy for the films is 2.96 eV and 3.11 eV for as-deposited films. Urbach tail analysis gives the width of localized states as 0.272 eV and 0.392 eV for two as-deposited films.