Institution
IBM
Company•Armonk, New York, United States•
About: IBM is a company organization based out in Armonk, New York, United States. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134567 authors who have published 253905 publications receiving 7458795 citations. The organization is also known as: International Business Machines Corporation & Big Blue.
Papers published on a yearly basis
Papers
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TL;DR: Rna22 as discussed by the authors identifies microRNA binding sites and their corresponding heteroduplexes, and then identifies the targeting microRNAs by finding putative microRN binding sites in the sequence of interest.
1,888 citations
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IBM1
TL;DR: A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated and molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin- film transistors.
Abstract: Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 06 square centimeters per volt-second and current modulation greater than 10(4) Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors
1,887 citations
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IBM1
TL;DR: The application of the statistical approach to translation from French to English and preliminary results are described and the results are given.
Abstract: In this paper, we present a statistical approach to machine translation. We describe the application of our approach to translation from French to English and give preliminary results.
1,860 citations
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IBM1
TL;DR: In this paper, the total resistivity of a thin metal film is calculated from a model in which three types of electron scattering mechanisms are simultaneously operative: an isotropic background scattering (due to the combined effects of phonons and point defects), scattering due to a distribution of planar potentials (grain boundaries), and scattering by the external surfaces.
Abstract: In this paper, the total resistivity of a thin metal film is calculated from a model in which three types of electron scattering mechanisms are simultaneously operative: an isotropic background scattering (due to the combined effects of phonons and point defects), scattering due to a distribution of planar potentials (grain boundaries), and scattering due to the external surfaces. The intrinsic or bulk resistivity is obtained by solving a Boltzmann equation in which both grain-boundary and background scattering are accounted for. The total resistivity is obtained by imposing boundary conditions due to the external surfaces (as in the Fuchs theory) on this Boltzmann equation. Interpretation of published data on grain-boundary scattering in bulk materials in terms of the calculated intrinsic resistivity, and of thin-film data in terms of the calculated total resistivity suggests that (i) the grain-boundary reflection coefficient in Al is \ensuremath{\approx} 0.15, while it is somewhat higher in Cu; (ii) the observed thickness dependence of the resistivity in thin films is due to grain-boundary scattering as well as to the Fuchs size effect; and (iii) the common observation that single-crystal films possess lower resistivities than polycrystalline films may be accounted for by grain-boundary effects rather than by differences in the nature of surface scattering.
1,842 citations
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IBM1
TL;DR: A simple and reliable method for selectively removing single carbon shells from MWNTs and SWNT ropes to tailor the properties of these composite nanotubes and to directly address the issue of multiple-shell transport.
Abstract: Carbon nanotubes display either metallic or semiconducting properties. Both large, multiwalled nanotubes (MWNTs), with many concentric carbon shells, and bundles or “ropes” of aligned single-walled nanotubes (SWNTs), are complex composite conductors that incorporate many weakly coupled nanotubes that each have a different electronic structure. Here we demonstrate a simple and reliable method for selectively removing single carbon shells from MWNTs and SWNT ropes to tailor the properties of these composite nanotubes. We can remove shells of MWNTs stepwise and individually characterize the different shells. By choosing among the shells, we can convert a MWNT into either a metallic or a semiconducting conductor, as well as directly address the issue of multiple-shell transport. With SWNT ropes, similar selectivity allows us to generate entire arrays of nanoscale field-effect transistors based solely on the fraction of semiconducting SWNTs.
1,838 citations
Authors
Showing all 134658 results
Name | H-index | Papers | Citations |
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Zhong Lin Wang | 245 | 2529 | 259003 |
Anil K. Jain | 183 | 1016 | 192151 |
Hyun-Chul Kim | 176 | 4076 | 183227 |
Rodney S. Ruoff | 164 | 666 | 194902 |
Tobin J. Marks | 159 | 1621 | 111604 |
Jean M. J. Fréchet | 154 | 726 | 90295 |
Albert-László Barabási | 152 | 438 | 200119 |
György Buzsáki | 150 | 446 | 96433 |
Stanislas Dehaene | 149 | 456 | 86539 |
Philip S. Yu | 148 | 1914 | 107374 |
James M. Tour | 143 | 859 | 91364 |
Thomas P. Russell | 141 | 1012 | 80055 |
Naomi J. Halas | 140 | 435 | 82040 |
Steven G. Louie | 137 | 777 | 88794 |
Daphne Koller | 135 | 367 | 71073 |