Moscow Institute of Physics and Technology

About: Moscow Institute of Physics and Technology is a education organization based out in Dolgoprudnyy, Russia. It is known for research contribution in the topics: Laser & Plasma. The organization has 8594 authors who have published 16968 publications receiving 246551 citations. The organization is also known as: MIPT & Moscow Institute of Physics and Technology (State University).

Position-Based Content Attention for Time Series Forecasting with Sequence-to-Sequence RNNs

Abstract: We propose here an extended attention model for sequence-to-sequence recurrent neural networks (RNNs) designed to capture (pseudo-)periods in time series. This extended attention model can be deployed on top of any RNN and is shown to yield state-of-the-art performance for time series forecasting on several univariate and multivariate time series.

Measurements of hc(P11) in ψ ′ Decays

Abstract: We present measurements of the charmonium state h(c) (P-1(1)) made with 106 x 10(6) psi' events collected by BESIII at BEPCII. Clear signals are observed for psi' -> pi(0)h(c) with and without the subsequent radiative decay h(c) -> gamma eta(c). First measurements of the absolute branching ratios B(psi' -> pi(0)h(c)) = (8.4 +/- 1.3 +/- 1.0 x 10(-4) and B(h(c) -> gamma eta(c)) = (54.3 +/- 6.7 +/- 5.2)% are presented. A statistics-limited determination of the previously unmeasured h(c) width leads to an upper limit Gamma(h(c)) pi(0)h(c)) x B(h(c) -> gamma eta(c)) = (4.58 +/- 0.40 +/- 0.50) x 10(-4) are consistent with previous results.

Ultrahigh Gain Polymer Photodetectors with Spectral Response from UV to Near-Infrared Using ZnO Nanoparticles as Anode Interfacial Layer

Abstract: Significant increase of photocurrent upon UV light exposure is demonstrated in a narrow-bandgap polymer-based photodetector using ZnO nanoparticles as anode interfacial layer. The phenomenon is attributed to the UV light illumination induced oxygen molecules desorption from surface of ZnO nanoparticles, which reduces the electron injection barrier at the anode interface. Ultrahigh external quantum efficiency of 140 000% and extremely low gain threshold voltage of 1.5 mV are achieved in this device with 30 s UV light irradiation. The gain mechanism is explained by the fast transit and replenishment of photogenerated electrons within their lifetime, which is prolonged by the electron-only device structure, and the experiment results fit well with the proposed photoconductive model.

Computational Search for Novel Hard Chromium-Based Materials.

Abstract: Nitrides, carbides, and borides of transition metals are an attractive class of hard materials. Our recent preliminary explorations of the binary chemical compounds indicated that chromium-based materials are among the hardest transition metal compounds. Motivated by this, here we explore in detail the binary Cr–B, Cr–C, and Cr–N systems using global optimization techniques. Calculated enthalpy of formation and hardness of predicted materials were used for Pareto optimization to define the hardest materials with the lowest energy. Our calculations recover all numerous known stable compounds (except Cr23C6 with its large unit cell) and discover a novel stable phase Pmn21-Cr2C. We resolve the structure of Cr2N and find it to be of anti-CaCl2 type (space group Pnnm). Many of these phases possess remarkable hardness, but only CrB4 is superhard (Vickers hardness 48 GPa). Among chromium compounds, borides generally possess the highest hardnesses and greatest stability. Under pressure, we predict stabilization o...

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Abstract: Color centers with long-lived spins are established platforms for quantum sensing and quantum information applications. Color centers exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state switching through the bias applied to the color center in an integrated silicon carbide optoelectronic device. We show that the electronic environment defined by the doping profile and the distribution of other defects in the device plays a key role for charge state control. Our experimental results and numerical modeling evidence that control of these complex interactions can, under certain conditions, enhance the photon emission rate. These findings open the way for deterministic control over the charge state of spin-active color centers for quantum technology and provide novel techniques for monitoring doping profiles and voltage sensing in microscopic devices.