Institution
Motilal Nehru National Institute of Technology Allahabad
Education•Allahabad, Uttar Pradesh, India•
About: Motilal Nehru National Institute of Technology Allahabad is a education organization based out in Allahabad, Uttar Pradesh, India. It is known for research contribution in the topics: Computer science & Control theory. The organization has 2475 authors who have published 5067 publications receiving 61891 citations. The organization is also known as: NIT Allahabad & Motilal Nehru Regional Engineering College.
Papers published on a yearly basis
Papers
More filters
••
01 Aug 2020
TL;DR: In this article, an attempt to calculate the extent of past floods and land use/land cover (LULC) classes affected by flooding using the GIS and remote sensing technique in the Prayagraj district of India.
Abstract: Flood is a catastrophic natural disaster event that is immensely threatening and affecting ecosystems as well as human lives all over the world. Flood frequently occurs in Indian districts during the monsoon season. Districts situated near the rivers are more prone to the flood risk. It is not possible to completely eliminate the flood risk, but its impact can be significantly reduced by geographic information system (GIS) and remote sensing-based solutions. This study is an attempt to calculate the extent of past floods and land use/land cover (LULC) classes affected by flooding using the GIS and remote sensing technique in the Prayagraj district of India. The flood risk mapping is performed by integrating the GIS with multi-criteria decision-making method called analytical hierarchy process (AHP). Flood affecting parameters are identified, which are drainage density, elevation, flow accumulation, LULC, roughness, slope and topographic wetness index. A flood risk map is generated through AHP and validated by the ROC curve method. Flood risk map has revealed that in the study area 701.71 km2 (12.80%) region comes under the high risk, while 1273.0 km2 (23.22.8%) region comes under the moderate risk.
31 citations
••
TL;DR: In this article, a double layer microwave absorber in 8.2-12.4 GHz frequency range was designed by combining the excellent dielectric characteristics of SiC with highly conductive Cu.
31 citations
••
27 Jul 2014
TL;DR: In this paper, the authors provided an improved power quality (PQ) disturbances classification, which were associated with load changes and environmental factors, by employing support vector machines (SVM) and decision tree classifiers.
Abstract: Penetration of distributed generation (DG) systems in conventional power systems leads to power quality (PQ) disturbances. This paper provides an improved PQ disturbances classification, which are associated with load changes and environmental factors. Various forms of PQ disturbances, including sag, swell, notch and harmonics, are taken into account. Several features are obtained through HS-transform, out of which optimal features are selected using a genetic algorithm (GA). These optimal features are used for PQ disturbances classification by employing support vector machines (SVM) and decision tree (DT) classifiers. The study is supported on three different case studies, considering experimental set-up prototypes for wind energy and photovoltaic (PV) systems, as well as the modified Nordic 32-bus test system. The robustness and precision of DT and SWM is performed with noise and harmonics in the disturbance signals, thus providing comprehensive results.
31 citations
••
TL;DR: In this article, a trisectoral approach that recognizes the complementarities between the government, the private sector, and the citizens' sector and encourages these sectors to collaborate may be vital to the common goal of capacity building among India's poor.
Abstract: In recent years, entrepreneurship has achieved significance as a driver of economic growth and poverty alleviation. This article focuses on various initiatives and entities that promote capacity building and entrepreneurship development among the poor in India and pays special attention to examining the ways in which these entities can better coordinate their efforts. The article first reviews the general literature on entrepreneurship and poverty eradication followed by a conceptual framework that models the efforts of the Indian government, the private sector, and the citizens' sector in promoting entrepreneurship and capacity building. This conceptual framework is utilized to discuss efforts of social entrepreneurs and self-help groups (SHGs) in India as well as to present a general sectoral assessment of the poverty-alleviation schemes in the subcontinent. The article's conclusions emphasize that neither markets alone nor governments alone are enough to eradicate poverty, especially in the Indian context. Instead, a trisectoral approach that recognizes the complementarities between the government, the private sector, and the citizens' sector and encourages these sectors to collaborate may be vital to the common goal of capacity building among India's poor. © 2012 Wiley Periodicals, Inc.
31 citations
••
TL;DR: In this article, an analytical model of a triple material double gate tunnel field effect transistor (TM-DG TFET) with hetero-dielectric gate oxide stack comprising of SiO2 and HfO2 was developed.
Abstract: In this paper, we propose and develop an analytical model of a Triple material double gate Tunnel Field Effect Transistor (TM-DG TFET) with hetero-dielectric gate oxide stack comprising of SiO2 and HfO2. The two-dimensional Poisson’s equation has been solved using parabolic-approximation method to model the channel potential and electric field. Analytical model of drain current is developed by integrating the band-to-band tunneling generation rate over the channel thickness (tsi) and shortest tunneling path ($L_{\min }$). A Transconductance model is also developed using this drain current model. The proposed TM-DG TFET also provides better result with reference to input-output characteristics, subthreshold swing, ION/IOFF current ratio and ambipolar effect compared to the dual material double gate (DM-DG) TFET. The analytical model has been validated with the numerical data obtained from commercial TCAD software.
30 citations
Authors
Showing all 2547 results
Name | H-index | Papers | Citations |
---|---|---|---|
Santosh Kumar | 80 | 1196 | 29391 |
Anoop Misra | 70 | 385 | 17301 |
Naresh Kumar | 66 | 1106 | 20786 |
Munindar P. Singh | 62 | 580 | 20279 |
Arvind Agarwal | 58 | 325 | 12365 |
Mahendra Kumar | 54 | 216 | 9170 |
Jay Singh | 51 | 301 | 8655 |
Lalit Kumar | 47 | 381 | 11014 |
O.N. Srivastava | 47 | 548 | 10308 |
Avinash C. Pandey | 45 | 301 | 7576 |
Sunil Gupta | 43 | 518 | 8827 |
Rakesh Mishra | 41 | 545 | 7385 |
Durgesh Kumar Tripathi | 37 | 133 | 5937 |
Vandana Singh | 35 | 190 | 4347 |
Prashant K. Sharma | 34 | 174 | 3662 |