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Institution

University of Colorado Colorado Springs

EducationColorado Springs, Colorado, United States
About: University of Colorado Colorado Springs is a education organization based out in Colorado Springs, Colorado, United States. It is known for research contribution in the topics: Population & Poison control. The organization has 6664 authors who have published 10872 publications receiving 323416 citations. The organization is also known as: UCCS & University of Colorado at Colorado Springs.


Papers
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Journal ArticleDOI
TL;DR: Dielectric barrier discharge technologies have been used to treat a polypropylene film and the low ageing effects and the surface reorganization are discussed.

91 citations

Proceedings ArticleDOI
05 Oct 2001
TL;DR: It is argued that for a large class of automatic categorization algorithms, extraction-based document categorization can be viewed as a particular form of feature selection performed on the full text of the document and its impact can be compared with state-of-the-art feature selection techniques especially devised to provide good categorization performance.
Abstract: We address the problem of evaluating the effectiveness of summarization techniques for the task of document categorization. It is argued that for a large class of automatic categorization algorithms, extraction-based document categorization can be viewed as a particular form of feature selection performed on the full text of the document and, in this context, its impact can be compared with state-of-the-art feature selection techniques especially devised to provide good categorization performance. Such a framework provides for a better assessment of the expected performance of a categorizer if the compression rate of the summarizer is known.

91 citations

Journal ArticleDOI
TL;DR: In this paper, the authors examined the effectiveness of validation group therapy for reducing problem behavior, use of physical restraints, and use of psychotropic medications, and for increasing positive social interactions and psychosocial well-being in nursing home residents with dementia.
Abstract: This study examined the effectiveness of validation group therapy for reducing problem behav iors, use of physical restraints, and use of psychotropic medications, and for increasing positive social interactions and psychosocial well-being in nursing home residents with dementia. In four skilled-care nursing homes, 88 residents with dementia were randomly assigned to a group receiving validation therapy (VT), a social contact (SC) group, or a usual care (UC) control group, and were assessed at baseline, 3 months, and 1 year. The nursing staff reported that VT participants showed less physically and verbally aggressive behavior and were not as depressed as residents in the SC or UC group. VT was not effective, however, in reducing the use of physical restraints or the use of psychotropic medications, and it was less effective than SC or UC in reducing physically nonaggressive problem behaviors.

91 citations

Patent
03 Feb 1995
TL;DR: In this article, an oversize ferroelectric capacitor is located against the contact hole to the MOSFET source/drain in a DRAM, and a barrier layer made of titanium nitride, titanium tungsten, tantalum, titanium, tengsten, molybdenum, chromium, indium tin oxide, tin dioxide, ruthenium oxide, silicon, silicide, or polycide lies between the barrier layer and the source drain.
Abstract: An oversize ferroelectric capacitor is located against the contact hole to the MOSFET source/drain in a DRAM. A barrier layer made of titanium nitride, titanium tungsten, tantalum, titanium, tungsten, molybdenum, chromium, indium tin oxide, tin dioxide, ruthenium oxide, silicon, silicide, or polycide lies between the ferroelectric layer and the source drain. The barrier layer may act as the bottom electrode of the ferroelectric capacitor, or a separate bottom electrode made of platinum may be used. In another embodiment in which the barrier layer forms the bottom electrode, an oxide layer less than 5 nm thick is located between the barrier layer and the ferroelectric layer and the barrier layer is made of silicon, silicide, or polycide. A thin silicide layer forms and ohmic contact between the barrier layer and the source/drain. The capacitor and the barrier layer are patterned in a single mask step. The ends of the capacitor are stepped or tapered. In another embodiment both the bottom and top electrode may be made of silicon, silicide, polycide or a conductive oxide, such as indium tin oxide, tin dioxide, or ruthenium oxide.

90 citations

Proceedings ArticleDOI
10 Apr 2006
TL;DR: In this article, a robust distance measure for face recognition is proposed, which can be used for secure robust revocable biometrics. But, unlike passwords, biometric signatures cannot be changed or revoked.
Abstract: This paper explores a form of robust distance measures for biometrics and presents experiments showing that, when applied per "class" they can dramatically improve the accuracy of face recognition. We "robustify'' many distance measures included in the CSU face-recognition toolkit, and apply them to PCA, LDA and EBGM. The resulting performance puts each of these algorithms, for the FERET datasets tested, on par with commercial face recognition results. Unlike passwords, biometric signatures cannot be changed or revoked. This paper shows how the robust distance measures introduce can be used for secure robust revocable biometrics. The technique produces what we call Biotopes/spl trade/, which provide public-key cryptographic security, supports matching in encoded form, cannot be linked across different databases and are revocable. Biotopes support a robust distance measure computed on the encoded form that is proven not to decrease, and that may potentially increase, accurately. The approach is demonstrated, to improve performance beyond the already impressive gains from the robust distance measure.

90 citations


Authors

Showing all 6706 results

NameH-indexPapersCitations
Jeff Greenberg10554243600
James F. Scott9971458515
Martin Wikelski8942025821
Neil W. Kowall8927934943
Ananth Dodabalapur8539427246
Tom Pyszczynski8224630590
Patrick S. Kamath7846631281
Connie M. Weaver7747330985
Alejandro Lucia7568023967
Michael J. McKenna7035616227
Timothy J. Craig6945818340
Sheldon Solomon6715023916
Michael H. Stone6537016355
Christopher J. Gostout6533413593
Edward T. Ryan6030311822
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202325
202246
2021569
2020543
2019479
2018454