A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

TLDR: Based on an analytical surface potential and a simple mathematical approximation for the source depletion width, a physics-based capacitance model with closed form for silicon double-gate tunnel field effect transistors (TFETs) is developed in this article.

Abstract: Based on an analytical surface potential and a simple mathematical approximation for the source depletion width, a physics-based capacitance model with closed form for silicon double-gate tunnel field-effect transistors (TFETs) is developed. Good agreements between the proposed model and the numerical simulations have been achieved, which reveal that the tunneling carriers from source have negligible contribution to the channel charges and the gate capacitance can be almost acted as the gate–drain capacitance, which is quite different from that of MOSFETs. This model without involving any iterative process is more SPICE friendly for circuit simulations compared with the table-lookup approach and would be helpful for developing the transient performance of TFET-based circuits.