Journal ArticleDOI
Modeling of threshold voltage and subthreshold slope of nanoscale DG MOSFETs
TLDR
In this article, a 2D analytical model for the threshold voltage and sub-threshold slope of fully depleted symmetric double gate (DG) n-MOSFETs has been presented.Abstract:
Two-dimensional (2D) analytical models for the threshold voltage and subthreshold slope of fully depleted symmetric double gate (DG) n-MOSFETs have been presented in this paper. 2D Poisson's equation has been solved with suitable boundary conditions to obtain the surface potential at the Si/SiO2 interface. The minimum surface potential has been employed to derive analytical expressions for the threshold voltage and subthreshold slope. Also, these expressions have been modified taking into account the effect of bandgap narrowing due to heavy channel doping and quantum-mechanical effects. In addition, the 2D numerical simulation results obtained using the device simulator ATLAS for the surface potential, the threshold voltage and subthreshold slope have been presented. Further our analytical data have been compared with numerical simulation results for various DG MOSFETs, and our analytical simulation results have also been compared with reported experimental data in the literature. A good agreement is observed among the three, ensuring the validity of our present model. The proposed model is simple and makes it easy to understand the influence of physical phenomena such as quantum-mechanical effects on the electrical parameters, such as the threshold voltage, compared to other models published elsewhere.read more
Citations
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Journal ArticleDOI
A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical Gaussian-like doping profile
TL;DR: In this paper, a two-dimensional model for the threshold voltage of the short-channel double-gate MOSFETs with a vertical Gaussian-like doping profile is proposed.
Journal ArticleDOI
Compact Model of Drain Current in Short-Channel Triple-Gate FinFETs
N. Fasarakis,A. Tsormpatzoglou,D. H. Tassis,Ilias Pappas,K. A. Papathanasiou,Matthias Bucher,Gerard Ghibaudo,Charalabos A. Dimitriadis +7 more
TL;DR: An analytical drain current model for undoped (or lightly doped) short-channel triple-gate fin-shaped field effect transistors (finFETs) is presented in this article.
Proceedings ArticleDOI
A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile
Pramod Kumar Tiwari,Surendra Kumar,Samarth Mittal,Vaibhav Srivastava,Utkarsh Pandey,Satyabrata Jit +5 more
TL;DR: In this article, a 2D analytical model for the potential function and threshold voltage of symmetric double-gate (DG) MOSFETs with vertical Gaussian doping profile in the channel is presented.
Journal ArticleDOI
Analytical Modeling of Threshold Voltage and Interface Ideality Factor of Nanoscale Ultrathin Body and Buried Oxide SOI MOSFETs With Back Gate Control
N. Fasarakis,T.A. Karatsori,D. H. Tassis,Christoforos G. Theodorou,Francois Andrieu,Olivier Faynot,Gerard Ghibaudo,Charalabos A. Dimitriadis +7 more
TL;DR: In this paper, simple analytical models for the front and back gate threshold voltages and ideality factors with back gate control of lightly doped short channel fully depleted silicon-on-insulator ultrathin body and buried oxide thickness MOSFETs have been developed based on the minimum value of the back surface potentials.
Journal ArticleDOI
A Subthreshold Swing Model for Symmetric Double- Gate (DG) MOSFETs with Vertical Gaussian Doping
TL;DR: An analytical subthreshold swing model is presented for symmetric double-gate (DG) MOSFETs with Gaussian doping profile in vertical direction based on the effective conduction path effect (ECPE) concept, believed to provide a better physical insight and understanding of DG MOSfET devices operating in the subth threshold regime.
References
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Journal ArticleDOI
Nanoscale silicon MOSFETs: A theoretical study
TL;DR: In this article, the authors carried out extensive numerical modeling of double-gate, nanoscale silicon n-metal oxide semiconductor field effect transistors (MOSFETs) with ultrathin, intrinsic channels connecting bulk, highly doped electrodes.
Journal ArticleDOI
A physical compact model of DG MOSFET for mixed-signal circuit applications- part I: model description
TL;DR: In this paper, a model that joins the two operating regions by using carrier-screening functions was constructed, which included consistently source/drain series resistance, low drain-field mobility, and small-geometry effects of drain-induced barrier lowering (DIBL), MOS interface mobility, velocity saturation and channel-length modulation.
Journal ArticleDOI
Analytical threshold voltage model for short channel n/sup +/-p/sup +/ double-gate SOI MOSFETs
TL;DR: In this paper, a two-dimensional (2D) Poisson equation in the channel region was solved for short channel n/sup +/-p/sup +/ double-gate SOI MOSFETs, and showed how to design a device with a decreased gate length, suppressing short channel threshold voltage shift /spl Delta/Vth and subthreshold swing degradation.
Journal ArticleDOI
Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET
TL;DR: In this article, a compact model for the threshold voltage in double-gate MOSFETs is developed, which takes into account short-channel effects, carrier quantization and temperature dependence of threshold voltage.
Journal ArticleDOI
Effects of substrate doping on the linearly extrapolated threshold voltage of symmetrical DG MOS devices
Xuejie Shi,Man Wong +1 more
TL;DR: In this paper, the authors derived an approximate but explicit expression for the linearly extrapolated threshold voltage of fully depleted, symmetrical double-gate metal-oxide-semiconductor (DG MOS) capacitors with intrinsic or doped silicon bodies.