Raman spectrum of graphene and graphene layers.
Andrea C. Ferrari,Jannik C. Meyer,Vittorio Scardaci,Cinzia Casiraghi,Michele Lazzeri,Francesco Mauri,S. Piscanec,Da Jiang,K. S. Novoselov,S. Roth,A. K. Geim +10 more
TLDR
This work shows that graphene's electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers, and allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area.Abstract:
Graphene is the two-dimensional building block for carbon allotropes of every other dimensionality We show that its electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers The D peak second order changes in shape, width, and position for an increasing number of layers, reflecting the change in the electron bands via a double resonant Raman process The G peak slightly down-shifts This allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research arearead more
Citations
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Preparation and characterization of graphite nano-platelet (GNP)/epoxy nano-composite: Mechanical, electrical and thermal properties
TL;DR: In this paper, the influence of graphite nano-platelets (GNPs) on the electrical and thermal conductivity, fracture toughness and storage modulus of the nano-composite was investigated.
Journal ArticleDOI
On-Chip Integrated, Silicon–Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain
Ilya Goykhman,U. Sassi,Boris Desiatov,Noa Mazurski,Silvia Milana,Domenico De Fazio,Anna Eiden,Jacob B. Khurgin,Joseph Shappir,Uriel Levy,Andrea C. Ferrari +10 more
TL;DR: An on-chip integrated metal graphene–silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency is reported, paving the way to graphene integrated silicon photonics.
Posted Content
Doping dependence of the Raman spectrum of defected graphene
TL;DR: A general relation between D peak intensity and defects valid for any doping level is presented, and for a given number of defects, it is found that the intensities of the D and D' peaks decrease with increasing doping.
Journal ArticleDOI
Phononics in low-dimensional materials
TL;DR: In this paper, the authors describe methods for tuning the phonon spectrum and engineering the thermal properties of the low-dimensional materials via ribbon edges, grain boundaries, isotope composition, defect concentration, and atomic-plane orientation.
Journal ArticleDOI
Progress and Challenges in Transfer of Large-Area Graphene Films.
TL;DR: This critical review assesses the recent development in transferring large‐area graphene grown on Fe, Ru, Co, Ir, Ni, Pt, Au, Cu, and some nonmetal substrates by using various synthesized methods and concludes the most promising methods and the further prospects of graphene transfer.
References
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疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A
TL;DR: PfPMP1）与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作�ly.