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Raman spectrum of graphene and graphene layers.

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TLDR
This work shows that graphene's electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers, and allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area.
Abstract
Graphene is the two-dimensional building block for carbon allotropes of every other dimensionality We show that its electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers The D peak second order changes in shape, width, and position for an increasing number of layers, reflecting the change in the electron bands via a double resonant Raman process The G peak slightly down-shifts This allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area

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Journal ArticleDOI

Monolayer Graphene as a Saturable Absorber in a Mode-Locked Laser

TL;DR: In this article, the intrinsic properties of monolayer graphene allow it to act as a more effective saturable absorber for mode-locking fiber lasers when compared to multilayer graphene.
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Fluorographene: a wide bandgap semiconductor with ultraviolet luminescence.

TL;DR: It is shown that treatment of graphene with xenon difluoride produces a partially fluorinated graphene (fluorographene) with covalent C-F bonding and local sp(3)-carbon hybridization, suggesting the use of fluorographane as a new, readily prepared material for electronic, optoelectronic applications, and energy harvesting applications.
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Transparent and conducting electrodes for organic electronics from reduced graphene oxide

TL;DR: In this paper, the authors describe the deposition and optoelectronic properties of reduced graphene oxide thin films with thicknesses ranging from 1-10nm by the vacuum filtration method.
Journal ArticleDOI

Flexible Piezoelectric-Induced Pressure Sensors for Static Measurements Based on Nanowires/Graphene Heterostructures

TL;DR: A pressure sensor with nanowires/graphene heterostructures for static measurements based on the synergistic mechanisms between strain-induced polarization charges in piezoelectric nanowire and graphene and the caused change of carrier scattering in graphene shows great potential in the applications of electronic skin and wearable devices.
Journal ArticleDOI

Tin disulfide-an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics.

TL;DR: A comprehensive characterization of the properties of tin disulfide (SnS2), an emerging semiconducting metal dichalcogenide, down to the monolayer limit is reported, showing that SnS2 is an indirect bandgap semiconductor over the entire thickness range from bulk to single-layer.
References
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疟原虫var基因转换速率变化导致抗原变异[英]/Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

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TL;DR: PfPMP1)与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作�ly.
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